Inombolo 1 Umgaqo wokusebenzisa i-magnetron sputtering enamandla aphezulu
Indlela yokutshiza i-magnetron ene-pulsed power ephezulu isebenzisa amandla e-pulse aphezulu (ii-oda ezi-2-3 zobukhulu obuphezulu kune-magnetron sputtering eqhelekileyo) kunye nomjikelo womsebenzi we-pulse ophantsi (0.5%-10%) ukufikelela kumazinga aphezulu okwahlukana kwesinyithi (>50%), okuvela kwiimpawu ze-magnetron sputtering, njengoko kubonisiwe kwiPic 1, apho i-peak target current density I ihambelana namandla e-exponential nth e-voltage yokukhupha u-U, I = kUn (n yi-constant enxulumene nesakhiwo se-cathode, i-magnetic field kunye nezinto). Kwi-power densities ephantsi (i-low voltage) ixabiso le-n lihlala liphakathi kwe-5 ukuya kwi-15; nge-voltage yokukhupha ekhulayo, i-current density kunye ne-power density iyanda ngokukhawuleza, kwaye kwi-voltage ephezulu ixabiso le-n liba yi-1 ngenxa yokulahlekelwa yi-magnetic field confinement. Ukuba kwi-power densities ephantsi, i-gas discharge imiselwa yi-gas ions ezikwi-pulsed discharge mode eqhelekileyo; Ukuba kubuninzi bamandla aphezulu, umlinganiselo wee-ion zesinyithi kwi-plasma uyanda kwaye ezinye izinto ziyatshintsha, oko kukuthi, kwimo yokuzitshiza, oko kukuthi, i-plasma igcinwa yi-ionization yee-particles ezingathathi hlangothi ezitshiziweyo kunye nee-ions zesinyithi zesibini, kwaye ii-athomu zegesi ezingasebenziyo ezifana ne-Ar zisetyenziselwa kuphela ukutshisa i-plasma, emva koko ii-particles zesinyithi ezitshiziweyo ziyatshizwa kufutshane nendawo ekujoliswe kuyo kwaye zikhawuleziswe ukubuya ukuze zihlasele indawo ekujoliswe kuyo phantsi kwesenzo see-magnetic kunye ne-electric fields ukugcina ukukhutshwa kombane okuphezulu, kwaye i-plasma yi-particles zesinyithi ezitshiziweyo kakhulu. Ngenxa yenkqubo yokutshiza yesiphumo sokufudumeza kwithagethi, ukuqinisekisa ukusebenza okuzinzileyo kwethagethi kwizicelo zoshishino, uxinano lwamandla olusetyenziswa ngqo kwithagethi alunakuba lukhulu kakhulu, ngokubanzi ukupholisa amanzi ngokuthe ngqo kunye nokuqhuba ubushushu bezinto ezijoliswe kuzo kufuneka kube kwimeko ye-25 W / cm2 ngezantsi, ukupholisa amanzi ngokungathanga ngqo, ukuqhuba ubushushu bezinto ezijoliswe kuzo akukuhle, izinto ezijoliswe kuzo ezibangelwa kukuqhekeka ngenxa yoxinzelelo lobushushu okanye izinto ezijoliswe kuzo ziqulethe izinto eziphantsi ze-alloy eziguquguqukayo kwaye ezinye iimeko zoxinano lwamandla zinokuba kwi-2 ~ 15 W / cm2 ngaphantsi, ngaphantsi kakhulu kweemfuno zoxinano lwamandla aphezulu. Ingxaki yokushushubeza ekujoliswe kuyo ingasombululwa ngokusebenzisa iipulses zamandla aphezulu ezincinci kakhulu. U-Anders uchaza ukutshiza kwemagnetron enamandla aphezulu njengohlobo lokutshiza apho uxinano lwamandla aphezulu ludlula uxinano lwamandla aphakathi nge-odolo ezi-2 ukuya kwezi-3 zobukhulu, kwaye ukutshiza kwe-ion ekujoliswe kuyo kulawula inkqubo yokutshiza, kwaye iiathom zokutshiza ekujoliswe kuzo zahlukene kakhulu.
No.2 Iimpawu zokufakwa kwe-coating ye-magnetron sputtering enamandla aphezulu
Ukutshiza ngamandla aphezulu kwemagnetron okushukumayo kunokuvelisa iplasma enesantya esiphezulu sokuhlukana kunye namandla aphezulu e-ion, kwaye kunokusebenzisa uxinzelelo lwe-bias ukukhawulezisa ii-ion ezitshajiweyo, kwaye inkqubo yokubeka i-coating ihlaselwa ngamasuntswana anamandla aphezulu, obububuchwepheshe obuqhelekileyo be-IPVD. Amandla e-ion kunye nokusasazwa kwayo kunempembelelo ebaluleke kakhulu kumgangatho kunye nokusebenza kwayo.
Malunga ne-IPVD, ngokusekelwe kwimodeli edumileyo yengingqi yesakhiwo saseThorton, u-Anders ucebise imodeli yengingqi yesakhiwo equka ukufakwa kweplasma kunye nokugrumba kwe-ion, wandisa ubudlelwane phakathi kwesakhiwo sengubo kunye nobushushu kunye noxinzelelo lomoya kwimodeli yengingqi yesakhiwo saseThorton ukuya kubudlelwane phakathi kwesakhiwo sengubo, ubushushu kunye namandla e-ion, njengoko kubonisiwe kwiPic 2. Kwimeko yengubo yengubo ye-ion energy ephantsi, isakhiwo sengubo sihambelana nemodeli yendawo yesakhiwo saseThorton. Ngokunyuka kobushushu bengubo, utshintsho ukusuka kummandla 1 (iikristale zefayibha ezikhululekileyo) ukuya kummandla T (iikristale zefayibha ezixineneyo), ummandla 2 (iikristale zekholamu) kunye nommandla 3 (ummandla we-recrystallization); ngokwanda kwamandla e-ion ye-deposit, ubushushu benguqu ukusuka kummandla 1 ukuya kummandla T, ummandla 2 kunye nommandla 3 buyancipha. Iikristale zefayibha ezinoxinano oluphezulu kunye neekristale zekholamu zinokulungiswa kubushushu obuphantsi. Xa amandla ee-ion ezigciniweyo enyuka ukuya kumyalelo we-1-10 eV, ukuqhushumba kunye nokugrumba kwee-ion kumphezulu wengubo egciniweyo kuyandiswa kwaye ubukhulu bengubo buyanda.
Inombolo 3 Ukulungiswa komaleko oqinileyo we-coating ngeteknoloji ye-magnetron sputtering enamandla aphezulu
Ingubo elungiselelwe ngetekhnoloji ye-magnetron sputtering enamandla aphezulu ixineneyo, ineempawu ezingcono zoomatshini kunye nokuzinza kobushushu obuphezulu. Njengoko kubonisiwe kwiPic 3, i-common magnetron sputtered TiAlN coating sisakhiwo sekristale esinobunzima be-30 GPa kunye ne-Young's modulus ye-460 GPa; i-HIPIMS-TiAlN coating yi-34 GPa hardness ngelixa i-Young's modulus yi-377 GPa; umlinganiselo phakathi kobunzima kunye ne-Young's modulus sisilinganiselo sokuqina kwengubo. Ubunzima obuphezulu kunye ne-Young's modulus encinci kuthetha ukuqina okungcono. Ingubo ye-HIPIMS-TiAlN inozinzo olungcono lobushushu obuphezulu, kunye ne-AlN hexagonal phase ekhawulezileyo kwingubo ye-TiAlN eqhelekileyo emva konyango lwe-annealing lobushushu obuphezulu kwi-1,000 °C kangangeeyure ezi-4. Ubunzima bengubo buyehla kubushushu obuphezulu, ngelixa i-HIPIMS-TiAlN coating ihlala ingatshintshanga emva konyango lobushushu kubushushu obufanayo kunye nexesha elifanayo. Ingubo ye-HIPIMS-TiAlN ikwanobushushu obuphezulu bokuqala bokunyibilika kobushushu obuphezulu kunengubo eqhelekileyo. Ke ngoko, ingubo ye-HIPIMS-TiAlN ibonisa ukusebenza ngcono kakhulu kwizixhobo zokusika ezikhawulezayo kunezinye izixhobo ezigqunywe nge-PVD.
Ixesha lokuthumela: Novemba-08-2022