No.1 Isimiso samandla aphezulu pulsed magnetron sputtering
Amandla aphezulu wokuphalaza kwe-magnetron sputtering isebenzisa amandla aphezulu aphezulu (ama-oda angu-2-3 of magnitude ephakeme kune-magnetron sputtering evamile) kanye nomjikelezo we-pulse duty duty (0.5% -10%) ukuze kuzuzwe amazinga aphezulu okuhlukanisa insimbi (>50%), etholakala ku-magnetron sputter, i-sputter yamanje ye-Pic pensiak ilingana namandla e-nth we-exponential we-voltage yokukhipha u-U, I = kUn (n ihlobene njalo nesakhiwo se-cathode, insimu yamagnetic kanye nezinto ezibonakalayo). Emazingeni aphansi wamandla (i-voltage ephansi) inani le-n ngokuvamile liphakathi kuka-5 kuya ku-15; nge-voltage yokukhipha ekhulayo, ukuminyana kwamanje kanye nokuminyana kwamandla kukhuphuka ngokushesha, futhi ku-voltage ephezulu inani elingu-n liba ngu-1 ngenxa yokulahlekelwa ukuvaleka kwendawo kazibuthe. Uma ekuminyana kwamandla aphansi, ukukhishwa kwegesi kunqunywa ama-ion egesi asesimweni esivamile sokukhipha i-pulsed discharge; uma amandla amakhulu aminyana, ingxenye yama-ion ensimbi ku-plasma iyanda kanye nokushintsha kwezinto ezithile, okukumodi yokuziphalaza, okungukuthi I-plasma igcinwa yi-ionization yezinhlayiya ezifafaziwe ezingathathi hlangothi nama-ion ensimbi yesibili, kanye nama-athomu egesi angasebenzi njenge-Ar asetshenziswa kuphela ukuthungela i-plasma eputshuziwe bese kuthi izinhlayiya zifakwe eduze kwe-actered insimbi, ngemva kwalokho kuhlaziywe insimbi. buyela emuva ukuze uqhume i-target sputtered ngaphansi kwesenzo sezinkambu zikazibuthe nezikagesi ukuze kugcinwe ukukhishwa okuphezulu kwamanje, futhi i-plasma iyizinhlayiya zensimbi ezine-ionized kakhulu. Ngenxa yenqubo yokufafaza yokushisa okuhlosiwe, ukuze kuqinisekiswe ukusebenza okuzinzile kokuhlosiwe ezinhlelweni zokusebenza zezimboni, ukuminyana kwamandla okusetshenziswe ngokuqondile kulokho okuhlosiwe angeke kube kukhulu kakhulu, ngokuvamile ukupholisa kwamanzi okuqondile kanye ne-conductivity yokushisa okuhlosiwe kufanele kube esimweni esingu-25 W / cm2 ngezansi, ukupholisa kwamanzi okungaqondile, okuhlosiwe okuhlosiwe okuhlosiwe okuhloswe ngakho kuqukethe ukucindezelwa okuhlosiwe okuhlosiwe okubangelwa ukucindezeleka okuphansi okuhlosiwe okubangelwa ukucindezeleka okuphansi kwe-fragment. izingxenye zengxubevange eguquguqukayo kanye nezinye izimo zokuminyana kwamandla kungaba kuphela ku-2 ~ 15 W / cm2 ngezansi, ngaphansi kakhulu kwezidingo zokuminyana kwamandla aphezulu. Inkinga yokushisa okuhlosiwe ingaxazululwa ngokusebenzisa ama-pulses aphezulu amancane amancane kakhulu. U-Anders uchaza i-sputtering ye-pulsed pulsed magnetron enamandla amakhulu njengohlobo lokufafaza okududuzayo lapho ukuminyana kwamandla aphezulu kudlula isilinganiso samandla esimaphakathi ngama-oda angu-2 ukuya kwangu-3 obukhulu, futhi i-ion sputtering eqondiwe ibusa inqubo yokufafaza, futhi ama-athomu okufafaza okuqondiwe ahluke kakhulu.
Cha.2 Izici zamandla aphezulu e-pulsed magnetron sputtering coating deposition
I-high power pulsed magnetron sputtering ingakhiqiza i-plasma enezinga eliphezulu lokuhlukanisa namandla e-ion aphezulu, futhi ingasebenzisa ukucindezela kokuchema ukuze kusheshiswe ama-ion akhokhisiwe, futhi inqubo yokubeka okokumboza ihlaselwe yizinhlayiya zamandla aphezulu, okuwubuchwepheshe obujwayelekile be-IPVD. Amandla e-ion nokusabalalisa kunomthelela obaluleke kakhulu kwikhwalithi yokumboza nokusebenza.
Mayelana ne-IPVD, ngokusekelwe kumodeli yesifunda sesakhiwo sase-Thorton esidumile, u-Anders uhlongoze imodeli yesifunda yesakhiwo ehlanganisa ukufakwa kwe-plasma nokushumeka kwe-ion, inwebe ubudlelwano phakathi kwesakhiwo sokumboza nezinga lokushisa kanye nomfutho womoya kumodeli yesifunda sesakhiwo sase-Thorton kubudlelwano phakathi kwesakhiwo sokumboza, izinga lokushisa namandla e-ion, njengoba kuboniswe ku-Pic 2. Esimeni sesakhiwo se-coating ephansi, imodeli ye-corton deposition. Ngokukhuphuka kwezinga lokushisa lokubeka, ukuguquka kusuka esifundeni 1 (amakristalu e-fiber avulekile) kuya esifundeni T (amakristalu e-fiber aminyene), isifunda 2 (amakristalu ekholomu) kanye nesifunda 3 (isifunda sokuvuselela kabusha); ngokwanda kwamandla e-ion ion, izinga lokushisa lokushintsha ukusuka esifundeni 1 ukuya esifundeni T, isifunda 2 kanye nesifunda sesi-3 liyehla. I-high-density fiber crystals namakristalu ekholomu angalungiswa ekushiseni okuphansi. Lapho amandla ama-ion afakiwe enyuka aze afike ku-1-10 eV, ukuqhunyiswa kwebhomu kanye nokucwiliswa kwama-ion endaweni ye-coatings efakiwe kuyathuthukiswa futhi ukujiya kwezimbobo kuyakhula.
No.3 Ukulungiswa kongqimba oluqinile lokunamathela ngamandla amakhulu obuchwepheshe be-pulsed magnetron sputtering
I-coating elungiselelwe amandla aphezulu e-pulsed magnetron sputtering technology iminyene, enezakhiwo ezingcono zemishini kanye nokuzinza okuphezulu kwezinga lokushisa. Njengoba kukhonjisiwe ku-Pic 3, i-magnetron evamile i-sputtered TiAlN coating iyi-columnar crystal structure enobulukhuni be-30 GPa kanye ne-Young's modulus engu-460 GPa; ukufakwa kwe-HIPIMS-TiAlN kungubulukhuni obungama-34 GPa kuyilapho imoduli ye-Young ingu-377 GPa; isilinganiso phakathi kokuqina kanye ne-Young's modulus isilinganiso sokuqina kokunamathela. Ukuqina okuphezulu kanye nemodulus encane ye-Young kusho ukuqina okungcono. Ukufakwa kwe-HIPIMS-TiAlN kunokuzinza okungcono kwezinga lokushisa eliphezulu, nesigaba se-AlN esiyi-hexagonal esinetha embotsheni evamile ye-TiAlN ngemva kokwelashwa kwe-annealing lokushisa eliphezulu ku-1,000 °C amahora angu-4. Ukuqina kokugqoka kuncipha ekushiseni okuphezulu, kuyilapho ukugqoka kwe-HIPIMS-TiAlN kuhlala kungashintshile ngemva kokwelashwa kokushisa ngesikhathi esifanayo sokushisa nesikhathi. I-HIPIMS-TiAlN yokugqoka nayo inezinga lokushisa eliphezulu lokuqalisa kwe-oxidation yokushisa ephezulu kunokwemboza okuvamile. Ngakho-ke, ukugqoka kwe-HIPIMS-TiAlN kubonisa ukusebenza okungcono kakhulu kumathuluzi okusika ngesivinini esikhulu kunamanye amathuluzi ahlanganisiwe alungiselelwe inqubo ye-PVD.
Isikhathi sokuthumela: Nov-08-2022