Izakhiwo ze-Plasma
Uhlobo lwe-plasma ekufakweni komphunga wamakhemikhali okuthuthukisiwe yi-plasma ukuthi incike emandleni e-kinetic ama-electron ku-plasma ukuze isebenze ukusabela kwamakhemikhali esigabeni segesi. Njengoba i-plasma iyiqoqo lama-ion, ama-electron, ama-athomu angathathi hlangothi nama-molecule, ayithathi hlangothi ngogesi ezingeni le-macroscopic. Ku-plasma, inani elikhulu lamandla ligcinwa emandleni angaphakathi e-plasma. I-plasma ekuqaleni ihlukaniswe nge-plasma eshisayo ne-plasma ebandayo. ohlelweni lwe-PECVD yi-plasma ebandayo eyakhiwa ukukhishwa kwegesi okuphansi komfutho. Le plasma ekhiqizwa ukukhishwa kwegesi okuphansi ngaphansi kwe-Pa engamakhulu ambalwa iyi-plasma yegesi engalingani.
Uhlobo lwale plasma lumi kanje:
(1) Ukunyakaza okungajwayelekile kokushisa kwama-electron nama-ion kudlula ukunyakaza kwawo okuqondisiwe.
(2) Inqubo yayo ye-ionization ibangelwa kakhulu ukushayisana kwama-electron asheshayo nama-molecule egesi.
(3) Amandla okunyakaza kokushisa ajwayelekile ama-electron aphezulu ngo-1 kuya ku-2 kunalawo ezinhlayiya ezisindayo, njengama-molecule, ama-athomu, ama-ion kanye nama-free radicals.
(4) Ukulahleka kwamandla ngemva kokushayisana kwama-electron nezinhlayiya ezisindayo kungakhokhelwa ensimini kagesi phakathi kokushayisana.
Kunzima ukuchaza i-plasma engalingani ngokushisa okuphansi enenani elincane lamapharamitha, ngoba iyi-plasma engalingani ngokushisa okuphansi ohlelweni lwe-PECVD, lapho izinga lokushisa le-electron Te lingafani ne-Tj yokushisa kwezinhlayiya ezisindayo. Kubuchwepheshe be-PECVD, umsebenzi oyinhloko we-plasma ukukhiqiza ama-ion asebenzayo ngamakhemikhali kanye nama-free-radicals. Lawa ma-ion nama-free-radicals asabela namanye ama-ion, ama-athomu nama-molecule esigabeni segesi noma abangele umonakalo we-lattice kanye nokusabela kwamakhemikhali ebusweni be-substrate, futhi isivuno sezinto ezisebenzayo siwumsebenzi wobuningi bama-electron, ukuhlushwa kwe-reactant kanye ne-yield coefficient. Ngamanye amazwi, isivuno sezinto ezisebenzayo sincike emandleni kagesi, ingcindezi yegesi, kanye nobubanzi obujwayelekile bezinhlayiya ngesikhathi sokushayisana. Njengoba igesi esabelayo ku-plasma ihlukana ngenxa yokushayisana kwama-electron anamandla aphezulu, isithiyo sokusebenza kwempendulo yamakhemikhali singanqotshwa futhi izinga lokushisa legesi esabelayo lingancishiswa. Umehluko omkhulu phakathi kwe-PECVD ne-CVD evamile ukuthi izimiso ze-thermodynamic zempendulo yamakhemikhali zihlukile. Ukuhlukaniswa kwama-molecule egesi ku-plasma akukhethi, ngakho-ke ungqimba lwefilimu olubekwe yi-PECVD luhluke ngokuphelele ku-CVD evamile. Ukwakheka kwesigaba okukhiqizwa yi-PECVD kungase kungabi yinto eyingqayizivele, futhi ukwakheka kwayo akusanqunyelwe yi-kinetics yokulingana. Ungqimba lwefilimu oluvame kakhulu yisimo esingenasimo.
Izici ze-PECVD
(1) Izinga lokushisa eliphansi lokufakwa.
(2) Nciphisa ukucindezeleka kwangaphakathi okubangelwa ukungalingani kwe-coefficient yokwandisa okuqondile kwezinto ze-membrane/base.
(3) Izinga lokufakwa liphezulu kakhulu, ikakhulukazi ukufakwa kwezinga lokushisa eliphansi, okusiza ekutholeni amafilimu angenasimo kanye nama-microcrystalline.
Ngenxa yenqubo yokushisa ephansi ye-PECVD, umonakalo wokushisa ungancishiswa, ukusabalala kanye nokusabela phakathi kwesendlalelo sefilimu nezinto ezingaphansi komhlaba kungancishiswa, njll., ukuze izingxenye ze-elekthronikhi zikwazi ukumbozwa kokubili ngaphambi kokuba zenziwe noma ngenxa yesidingo sokulungiswa kabusha. Ekwenzeni amasekethe ahlanganisiwe e-ultra-large scale (VLSI, ULSI), ubuchwepheshe be-PECVD busetshenziswa ngempumelelo ekwakhiweni kwefilimu ye-silicon nitride (SiN) njengefilimu yokugcina evikelayo ngemuva kokwakhiwa kwezintambo ze-Al electrode, kanye nokuthamba kanye nokwakheka kwefilimu ye-silicon oxide njengokufakwa kwe-interlayer. Njengamadivayisi efilimu encane, ubuchwepheshe be-PECVD busetshenziswe ngempumelelo ekwakhiweni kwama-transistors efilimu encane (TFTs) ezibonisini ze-LCD, njll., kusetshenziswa ingilazi njenge-substrate endleleni esebenzayo ye-matrix. Ngokuthuthuka kwamasekethe ahlanganisiwe kuya ekuhlanganisweni okukhulu kanye nokusetshenziswa kabanzi kwamadivayisi e-semiconductor ahlanganisiwe, i-PECVD iyadingeka ukuthi yenziwe ekushiseni okuphansi kanye nezinqubo zamandla e-electron eziphakeme. Ukuze kuhlangatshezwane nale mfuneko, ubuchwepheshe obungahlanganisa amafilimu e-flatness aphezulu emazingeni okushisa aphansi kufanele buthuthukiswe. Amafilimu e-SiN kanye ne-SiOx afundwe kabanzi kusetshenziswa i-plasma ye-ECR kanye nobuchwepheshe obusha be-plasma chemical vapor deposition (PCVD) obune-plasma ye-helical, futhi afinyelele ezingeni elisebenzayo ekusetshenzisweni kwamafilimu okushisa aphakathi kwezingqimba zamasekethe ahlanganisiwe amakhulu, njll.
Isikhathi sokuthunyelwe: Novemba-08-2022