Iipropati zePlasma
Uhlobo lweplasma kwi-plasma-enhanced chemical vapor deposition kukuba ixhomekeke kumandla e-kinetic ee-electron kwiplasma ukuze isebenze ii-chemical reactions kwi-gas phase. Ekubeni iplasma yingqokelela yee-ions, ii-electron, ii-athomu ezingathathi cala kunye nee-molecules, ayithathi cala ngombane kwinqanaba le-macroscopic. Kwiplasma, inani elikhulu lamandla ligcinwa kumandla angaphakathi eplasma. Iplasma yahlulwe ekuqaleni ibe yiplasma eshushu kunye neplasma ebandayo. kwinkqubo yePECVD yiplasma ebandayo eyenziwe kukukhupha igesi exineneyo ephantsi. Le plasma iveliswa kukukhupha igesi exineneyo ephantsi kwe-Pa engamakhulu ambalwa yiplasma yegesi engalinganiyo.
Uhlobo lwale plasma lulandelayo:
(1) Intshukumo engaqhelekanga yobushushu yee-elektroni kunye nee-ion idlula intshukumo yazo eqondisiweyo.
(2) Inkqubo yayo ye-ionization ibangelwa kakhulu kukungqubana kwee-electron ezikhawulezayo neemolekyuli zegesi.
(3) Amandla aqhelekileyo okunyakaza kobushushu kwii-electron aphezulu nge-1 ukuya kwi-2 orders ngobukhulu kunalawo amasuntswana anzima, anjengee-molecules, ii-atom, ii-ions kunye nee-free radicals.
(4) Ukulahleka kwamandla emva kokungqubana kwee-elektroni kunye namasuntswana anzima kunokubuyiselwa kumandla ombane phakathi kokungqubana.
Kunzima ukuchaza iplasma ye-non-equilibrium enobushushu obuphantsi enenani elincinci leeparameter, kuba yiplasma ye-non-equilibrium enobushushu obuphantsi kwinkqubo ye-PECVD, apho ubushushu be-electron Te bungafani nobushushu be-Tj yamasuntswana anzima. Kwitekhnoloji ye-PECVD, umsebenzi ophambili weplasma kukuvelisa ii-ion ezisebenzayo ngokwekhemikhali kunye nee-free-radicals. Ezi i-ion kunye nee-free-radicals zisabela kunye nezinye ii-ion, ii-athomu kunye nee-molecules kwisigaba segesi okanye zibangele umonakalo we-lattice kunye neempendulo zeekhemikhali kumphezulu we-substrate, kwaye isivuno sezinto ezisebenzayo ngumsebenzi woxinano lwee-electron, uxinzelelo lwe-reactant kunye ne-yield coefficient. Ngamanye amazwi, isivuno sezinto ezisebenzayo sixhomekeke kumandla entsimi yombane, uxinzelelo lwegesi, kunye nobubanzi obuqhelekileyo bee-particles ngexesha lokungqubana. Njengoko igesi ye-reactant kwi-plasma ihlukana ngenxa yokungqubana kwee-electron ezinamandla aphezulu, umqobo wokusebenza kwempendulo yeekhemikhali unokoyiswa kwaye ubushushu begesi ye-reactant bunokwehliswa. Umahluko ophambili phakathi kwe-PECVD kunye ne-CVD eqhelekileyo kukuba imigaqo ye-thermodynamic yempendulo yeekhemikhali yahlukile. Ukuhlukana kweemolekyuli zegesi kwiplasma akukhethi, ngoko ke umaleko wefilimu obekwe yiPECVD wahlukile ngokupheleleyo kwiCVD eqhelekileyo. Ulwakhiwo lwesigaba oluveliswa yiPECVD lusenokuba lolodwa olungenakulinganiswa, kwaye ukwakheka kwalo akusathintelwa yi-equilibrium kinetics. Umaleko wefilimu oqhelekileyo yimeko engabonakaliyo.
Iimpawu zePECVD
(1) Ubushushu obuphantsi bokufaka.
(2) Nciphisa uxinzelelo lwangaphakathi olubangelwa kukungangqinelani kwe-coefficient yokwandiswa komgca we-membrane/izinto ezisisiseko.
(3) Izinga lokufakwa kwezinto liphezulu, ingakumbi ukubekwa kwezinto kubushushu obuphantsi, nto leyo enceda ekufumaneni iifilimu ezingaguqukiyo nezincinci.
Ngenxa yenkqubo yobushushu obuphantsi be-PECVD, umonakalo wobushushu ungancitshiswa, ukusasazeka kunye nokusabela phakathi komaleko wefilimu kunye nezinto ze-substrate kungancitshiswa, njl.njl., ukuze izinto ze-elektroniki zigqunywe zombini ngaphambi kokuba zenziwe okanye ngenxa yesidingo sokuphinda zisetyenziswe. Ekwenzeni iisekethe ezidibeneyo ezinkulu kakhulu (VLSI, ULSI), iteknoloji ye-PECVD isetyenziswa ngempumelelo ekwenziweni kwefilimu ye-silicon nitride (SiN) njengefilimu yokugqibela yokukhusela emva kokwenziwa kwentambo ye-Al electrode, kunye nokuthamba kunye nokwakhiwa kwefilimu ye-silicon oxide njenge-insulation ye-interlayer. Njengezixhobo zefilimu encinci, iteknoloji ye-PECVD ikwasetyenziswe ngempumelelo ekwenziweni kwee-transistors zefilimu encinci (TFTs) ze-LCD displays, njl.njl., kusetyenziswa iglasi njenge-substrate kwindlela esebenzayo ye-matrix. Ngophuhliso lweesekethe ezidibeneyo ukuya kumlinganiselo omkhulu kunye nokuhlanganiswa okuphezulu kunye nokusetyenziswa ngokubanzi kwezixhobo ze-semiconductor ezihlanganisiweyo, i-PECVD kufuneka yenziwe kubushushu obuphantsi kunye neenkqubo zamandla e-electron eziphezulu. Ukuhlangabezana nale mfuneko, kufuneka kuphuhliswe iteknoloji ezinokwenza iifilimu ezithe tyaba kakhulu kubushushu obuphantsi. Iifilimu zeSiN kunye neSiOx zifundwe ngokubanzi kusetyenziswa i-ECR plasma kunye netekhnoloji entsha ye-plasma chemical vapor deposition (PCVD) ene-helical plasma, kwaye zifikelele kwinqanaba elisebenzayo ekusebenziseni iifilimu ze-interlayer insulation kwiisekethe ezinkulu ezidibeneyo, njl.
Ixesha lokuthumela: Novemba-08-2022