Hunhu hwePlasma
Hunhu hweplasma muplasma-enhanced chemical vapor deposition ndeyekuti inovimba nesimba rema electron ari muplasma kuti iite kuti makemikari ashande mu gas phase. Sezvo plasma iri muunganidzwa wema ions, ma electron, maatomu asina kusimba uye mamorekuru, haina magetsi padanho re macroscopic. Mu plasma, simba rakawanda rinochengetwa mu internal energy ye plasma. Plasma pakutanga yakakamurwa kuita hot plasma ne cold plasma. Mu PECVD system i cold plasma inoumbwa ne low pressure gas discharge. Iyi plasma inogadzirwa ne low pressure discharge iri pasi pemazana mashoma ePa i non-equilibrium gas plasma.
Mhando yeplasma iyi ndeiyi inotevera:
(1) Kufamba kusina kurongeka kwemaerekitironi nemaion pakupisa kunopfuura kufamba kwavanenge vakananga.
(2) Maitiro ayo eionization anonyanya kukonzerwa nekubonderana kwemaerekitironi anokurumidza nemamorekuru egasi.
(3) Avhareji yesimba rekufamba kwemafuta emaerekitironi yakakwira ne1 kusvika ku2 orders yehukuru kupfuura iyo yezvikamu zvinorema, zvakaita semamorekuru, maatomu, maion uye free radicals.
(4) Kurasikirwa kwesimba mushure mekubonderana kwemaerekitironi nezvimedu zvinorema kunogona kudzoserwa kubva mumunda wemagetsi pakati pekubonderana.
Zvakaoma kutsanangura plasma isina kuenzana nekupisa kwakaderera ine ma parameter mashoma, nekuti iplasma isina kuenzana nekupisa kwakaderera muPECVD system, uko tembiricha ye electron Te isiri yakafanana netembiricha ye Tj yezvikamu zvinorema. Mu PECVD tekinoroji, basa guru re plasma nderekugadzira ma ions anoshanda nemakemikari uye ma free-radicals. Aya ma ions nema free-radicals anosangana nemamwe ma ions, maatomu nemamorekuru mu gas phase kana kukonzera kukuvara kwe lattice uye chemical reactions pamusoro pe substrate, uye goho rezvinhu zvinoshanda ibasa re electron density, reactant concentration uye yield coefficient. Nemamwe mashoko, goho rezvinhu zvinoshanda rinoenderana nesimba remagetsi, kumanikidzwa kwegasi, uye avhareji ye free range yezvikamu panguva yekusangana. Sezvo gasi re reactant mu plasma richipatsanuka nekuda kwekusangana kwema electrons ane simba rakawanda, activation barrier ye chemical reaction inogona kukundwa uye tembiricha ye reactant gas inogona kuderedzwa. Musiyano mukuru pakati pePECVD ne CVD yakajairika ndewekuti thermodynamic principles ye chemical reaction yakasiyana. Kupatsanurwa kwemamorekuru egasi muplasma hakusarudze, saka firimu rakaiswa nePECVD rakasiyana zvachose neCVD yakajairika. Musanganiswa wechikamu unogadzirwa nePECVD unogona kunge usina kuenzana, uye kuumbwa kwawo hakuchaganhurwi ne equilibrium kinetics. Firimu rakajairwa zvikuru i amorphous state.

Zvinhu zvePECVD
(1) Tembiricha yakaderera yekuisa zvinhu.
(2) Deredza kushushikana kwemukati kunokonzerwa nekusawirirana kwe coefficient yekuwedzera kwemutsara we membrane/base material.
(3) Mwero wekuiswa kwechinhu wakakwira zvakanyanya, kunyanya kuiswa kwechinhu patembiricha yakaderera, izvo zvinoita kuti pave nemafirimu asina chimiro uye madiki-diki.
Nekuda kwekudzikira kwekupisa kwePECVD, kukuvara kwekupisa kunogona kuderedzwa, kupararira pamwe chete uye kuita pakati pechikamu chefirimu nezvinhu zve substrate zvinogona kuderedzwa, nezvimwewo, kuitira kuti zvikamu zvemagetsi zvikwanise kuputirwa zvisati zvagadzirwa kana nekuda kwekudiwa kwekugadzirisazve. Pakugadzira ma ultra-large scale integrated circuits (VLSI, ULSI), tekinoroji yePECVD inoshandiswa zvinobudirira pakuumbwa kwesilicon nitride film (SiN) sefirimu rekudzivirira rekupedzisira mushure mekuumbwa kweAl electrode wiring, pamwe nekupeta uye kuumbwa kwesilicon oxide film se interlayer insulation. Sezvishandiso zve thin-film, tekinoroji yePECVD yakashandiswawo zvinobudirira pakugadzirwa kwe thin-film transistors (TFTs) dzeLCD displays, nezvimwewo, uchishandisa girazi se substrate munzira inoshanda ye matrix. Nekuvandudzwa kwema circuits akabatanidzwa kusvika pakukura uye kubatanidzwa kwepamusoro uye kushandiswa kwakanyanya kwe compound semiconductor devices, PECVD inofanirwa kuitwa pakupisa kwakaderera uye ma electron energy processes akakwira. Kuti zvizadzise chinodiwa ichi, matekinoroji anogona kugadzira ma flatness films akakwira pakupisa kwakaderera anofanira kugadzirwa. Mafirimu eSiN neSiOx akadzidzwa zvakanyanya achishandisa ECR plasma uye tekinoroji itsva yeplasma chemical vapor deposition (PCVD) ine helical plasma, uye asvika padanho rekushandisa interlayer insulation films kuma scale integrated circuits, nezvimwewo.
Nguva yekutumira: Mbudzi-08-2022
