Izici zePlasma
Imvelo ye-plasma ekufakweni kwamakhemikhali okwenziwa ngcono kwe-plasma ukuthi incike emandleni e-kinetic ama-electron aku-plasma ukuze enze kusebenze ukusabela kwamakhemikhali esigabeni segesi. Njengoba i-plasma iyiqoqo lama-ion, ama-electron, ama-athomu angathathi hlangothi nama-molecule, ayithathi hlangothi ngogesi ezingeni le-macroscopic. Ku-plasma, inani elikhulu lamandla ligcinwa emandleni angaphakathi e-plasma. I-Plasma ekuqaleni ihlukaniswe i-plasma eshisayo ne-plasma ebandayo. ohlelweni lwe-PECVD yi-plasma ebandayo eyakhiwa ukukhishwa kwegesi yokucindezela okuphansi. Le plasma ekhiqizwa ukukhishwa kwengcindezi ephansi ngaphansi kwamakhulu ambalwa e-Pa iyi-plasma yegesi engalingani.
Imvelo yale plasma imi kanje:
(1) Ukunyakaza okushisayo okungavamile kwama-electron nama-ion kudlula ukunyakaza kwawo okuqondisiwe.
(2) Inqubo yayo ye-ionization ibangelwa ikakhulukazi ukushayisana kwama-electron asheshayo nama-molecule egesi.
(3) Isilinganiso samandla okunyakaza okushisayo kwama-electron singama-oda angu-1 kuya kwangu-2 obukhulu obuphakeme kunalawo ezinhlayiya ezisindayo, njengama-molecule, ama-athomu, ama-ion nama-radicals mahhala.
(4) Ukulahlekelwa kwamandla ngemva kokushayisana kwama-electron nezinhlayiya ezinzima kunganxeshezelwa endaweni kagesi phakathi kokushayisana.
Kunzima ukuveza i-plasma yezinga lokushisa eliphansi elingalingani nenani elincane lamapharamitha, ngoba i-plasma yezinga lokushisa eliphansi elingalingani ohlelweni lwe-PECVD, lapho izinga lokushisa le-electron Te lingafani nokushisa kwe-Tj yezinhlayiya ezinzima. Kubuchwepheshe be-PECVD, umsebenzi oyinhloko we-plasma ukukhiqiza ama-ion asebenzayo ngamakhemikhali nama-radicals mahhala. Lawa ma-ion nama-free-radicals asabela namanye ama-ion, ama-athomu nama-molecule esigabeni segesi noma abangele ukulimala kwe-lattice nokusabela kwamakhemikhali endaweni engaphansi, futhi ukukhiqizwa kwezinto ezisebenzayo kuwumsebenzi wokuminyana kwama-electron, ukugxilwa kwe-reactant kanye ne-coefficient yesivuno. Ngamanye amazwi, isivuno sezinto ezisebenzayo sincike emandleni kagesi, ingcindezi yegesi, kanye nesilinganiso samahhala sezinhlayiya ngesikhathi sokungqubuzana. Njengoba igesi esabelayo kuplasma ihlukana ngenxa yokushayisana kwama-electron anamandla amakhulu, umgoqo wokwenza kusebenze wokusabela kwamakhemikhali unganqotshwa futhi izinga lokushisa legesi elisabelayo lingancishiswa. Umehluko omkhulu phakathi kwe-PECVD ne-CVD evamile ukuthi izimiso ze-thermodynamic zokusabela kwamakhemikhali zihlukile. Ukuhlukaniswa kwama-molecule egesi ku-plasma akukhethi, ngakho ungqimba lwefilimu olufakwe yi-PECVD luhluke ngokuphelele ku-CVD evamile. Ukubunjwa kwesigaba okukhiqizwe yi-PECVD kungase kuhluke ngokungalingani, futhi ukwakheka kwayo akusakhawulelwe yi-equilibrium kinetics. Isendlalelo sefilimu esijwayelekile kakhulu yisimo se-amorphous.
Izici ze-PECVD
(1) Izinga lokushisa eliphansi lokubeka.
(2) Yehlisa ukucindezelwa kwangaphakathi okubangelwa ukungafani kwe-coefficient yomugqa wokwandisa we-membrane/isisekelo esibalulekile.
(3) Izinga lokubeka liphezulu uma kuqhathaniswa, ikakhulukazi izinga lokushisa eliphansi, elivumela ukuthola amafilimu e-amorphous kanye ne-microcrystalline.
Ngenxa yenqubo yokushisa ephansi ye-PECVD, umonakalo oshisayo ungancishiswa, ukuhlukaniswa okuhlangene nokusabela phakathi kwesendlalelo sefilimu kanye nezinto ezingaphansi kungancishiswa, njll., Ukuze izingxenye ze-elekthronikhi ziboshwe kokubili ngaphambi kokuba zenziwe noma ngenxa yesidingo sokusebenza kabusha. Ukuze kwenziwe ama-ultra-large scale integrated circuits (VLSI, ULSI), ubuchwepheshe be-PECVD busetshenziswa ngempumelelo ekwakhiweni kwefilimu ye-silicon nitride (SiN) njengefilimu yokugcina evikelayo ngemva kokwakhiwa kwe-Al electrode wiring, kanye nokwenza isicaba kanye nokwakhiwa kwefilimu ye-silicon oxide njenge-interlayer insulation. Njengamadivayisi anefilimu emincane, ubuchwepheshe be-PECVD buye basetshenziswa ngempumelelo ekwakhiweni kwama-transistors amafilimu amancane (TFTs) wezibonisi ze-LCD, njll., kusetshenziswa ingilazi njenge-substrate endleleni ye-matrix esebenzayo. Ngokuthuthukiswa kwamasekethe ahlanganisiwe kuya esikalini esikhulu kanye nokuhlanganiswa okuphezulu kanye nokusetshenziswa kabanzi kwamadivayisi ahlanganisiwe we-semiconductor, i-PECVD idingeka ukuthi yenziwe ekushiseni okuphansi kanye nezinqubo zamandla e-electron aphezulu. Ukuze kuhlangatshezwane nalesi sidingo, kuzothuthukiswa ubuchwepheshe obungahlanganisa amafilimu ayisicaba aphezulu emazingeni okushisa aphansi. Amafilimu e-SiN ne-SiOx acutshungulwe kakhulu kusetshenziswa i-ECR plasma kanye nobuchwepheshe obusha be-plasma chemical vapor deposition (PCVD) obune-plasma ye-helical, futhi afinyelele izinga elingokoqobo ekusetshenzisweni kwamafilimu okufakwa kwe-interlayer kumasekhethi amakhulu ahlanganisiwe, njll.
Isikhathi sokuthumela: Nov-08-2022