Ekuthuthukisweni kobuchwepheshe bokupakisha be-semiconductor, ukuxhumana okuqondile bekulokhu kuyisici esibalulekile esinquma ukusebenza kwesistimu, indawo ezungezile, kanye nokusetshenziswa kwamandla. Kusukela kumasu okuqala okubopha ucingo kanye ne-flip-chip kuya ekuveleni kwama-IC ahlanganisiwe e-3D, imboni ibilokhu ifuna izixazululo zokuxhumanisa ezimfushane nezinobukhulu obuphezulu.
Kulesi simo, i-TSV (Through Silicon Via) kanye ne-TGV (Through Glass Via) zivele njengobuchwepheshe obubili obujwayelekile bokuxhumana okuqondile. Zihlukile ezinhlelweni zezinto ezibonakalayo, izinqubo zokukhiqiza, izici zokusebenza, kanye nezizinda zohlelo lokusebenza, okumelela iphuzu elibalulekile ekuthuthukisweni kokupakisha kwesizukulwane esilandelayo.
I. TSV: Iphayona Lokupakisha Kwe-3D
1. Isimiso Sobuchwepheshe
I-TSV ibhekisela kuma-via anesilinganiso esiphezulu aqoshwe nge-substrate ye-silicon (ngokuvamile amashumi kuya kwamakhulu ama-micron ajulile), kulandelwe ukwakheka kwesendlalelo sokuvikela, isendlalelo sembewu yensimbi, kanye nokugcwaliswa kwensimbi (ngokuvamile ithusi) ezindongeni ze-via. Lawa ma-via aqondile avumela ukuxhumana kukagesi okusheshayo phakathi kwezingqimba ze-chip ezihlanganisiwe.
2. Ukugeleza Kwenqubo
Inqubo ejwayelekile yokwenziwa kwe-TSV ifaka:
I-Deep Silicon Etching (DRIE): Dala ama-vias anesilinganiso esiphezulu ku-wafer ye-silicon.
Ukufakwa Kwezingqimba Zokuvikela: Ngokuvamile i-SiO₂ efakwa yi-PECVD ukuze ihlukanise ngogesi ukugcwaliswa kwensimbi kusuka ku-substrate ye-silicon.
Ukufakwa Kwesendlalelo Sembewu Nokuqopha Ngogesi: Ukufakwa kwe-PVD kwesendlalelo sembewu yensimbi kulandelwe ukufakelwa kwe-electroplating yethusi.
Ukupholisha Kwemishini Yamakhemikhali (i-CMP): Susa insimbi eningi ukuze uthole indawo ehlelekile.
3. Izinzuzo kanye nokulinganiselwa
I-TSV inikeza izindlela zokuxhumanisa ezimfushane kakhulu, ukubambezeleka kwesignali okuphansi, ukusetshenziswa kwamandla okuphansi, kanye nomkhawulokudonsa ophezulu, okwenza kube yinto ebalulekile evumela ukubalwa kokusebenza okuphezulu kanye nenkumbulo yomkhawulokudonsa ophezulu.
Kodwa-ke, i-TSV nayo inemikhawulo:
Izinkinga zokucindezeleka kokushisa: Ukungafani okukhulu kwe-CTE phakathi kwe-silicon nethusi kunganciphisa ukuthembeka.
Izindleko zenqubo ephezulu: Ukuqopha okujulile, ukufakelwa nge-electroplating, kanye ne-CMP kuyinkimbinkimbi futhi kuyazwela ekukhiqizeni.
Izinselele zokuvikela ugesi: Ubukhulu kanye nokufana kwesendlalelo sokuvikela kuthinta ngqo amandla e-dielectric.
Njengoba ubuningi bokuhlanganiswa kwama-chip bukhula, ukungqubuzana phakathi kwenzuzo kanye nezindleko kuye kwaholela ekuhlolweni kwezinto ezihlukile—okudala ithuba le-TGV.
II. I-TGV: Ukuqamba Okusha Okusekelwe Engilazini
1. Isimiso Sobuchwepheshe
I-TGV isebenzisa izisekelo zengilazi esikhundleni se-silicon. Ama-vias anembe kakhulu akhiwa ngokubhoboza nge-laser noma ngokucwilisa okumanzi, kulandelwe ukufakwa kwengqimba yembewu yensimbi kanye nokufakwa kwe-electroplating, kufinyelela ukuxhumana okuqondile okufana ne-TSV.
I-Glass inikeza ukuvikelwa kukagesi okuhle kakhulu, ukungaguquguquki kwe-dielectric okuphansi (Dk), ukulahleka kwe-dielectric okuphansi (Df), kanye nokuqina okuvelele kobukhulu, okwenza i-TGV ikhangise kakhulu ekudlulisweni kwesignali yesivinini esikhulu kanye nokupakishwa kwe-optoelectronic.
2. Ukugeleza Kwenqubo
Izinyathelo ezibalulekile ekwakhiweni kwe-TGV zifaka:
Ukubhoboza nge-Laser: Ama-laser ashesha kakhulu akha ama-microvia engilazini anobubanzi obuvame ukuba phakathi kuka-20–150 μm.
Ukufakwa Kwesendlalelo Sembewu: I-PVD, njengokufakwa kwe-magnetron, ibeka isendlalelo esihambisanayo sokuhambisa amanzi odongeni.
Ukufakwa Kwensimbi Nge-Electroplating: I-alloy yethusi noma i-nickel-copper igcwalisa ama-via ukuze kwakheke ukuxhumana kukagesi ngengilazi.
Ukuhlela kanye Nokwenza Amaphethini: Kuvumela ukuxhumana noma ukubopha okunezingqimba eziningi kuma-chip e-IC.
3. Izinzuzo
Uma kuqhathaniswa ne-TSV, i-TGV ikhombisa izinzuzo eziningana:
Ukulahleka okuphansi kwe-dielectric: I-Glass Dk cishe iyi-1/3 ye-silicon, okunciphisa ukulahleka kwe-crosstalk yesiginali kanye nokufakwa.
Ukuqina okuhle kakhulu kokushisa: i-CTE iseduze nezinsimbi, okunciphisa ukucindezeleka kokushisa.
Ukubonakala okubonakalayo: Kusekela ukuhlanganiswa kwe-optoelectronic kuma-photonics nama-sensor.
Izindleko ezingalawuleka: Ukubhoboza nge-laser kanye nokucubungula ingilazi kuyavuthwa, kufaneleka ukukhiqizwa kwezinga lephaneli endaweni enkulu.
III. I-TSV vs TGV: Izizinda Zokuqhathanisa Nezokusetshenziswa
| Into | I-TSV (Nge-Silicon Via) | I-TGV (Nge-Glass Via) |
| I-substrate | I-silicon e-monocrystalline | Ingilazi ekhethekile (iBorofloat, iCorning, iSchott, njll.) |
| Ububanzi bomgodi | 5–50 μm | 20–150 μm |
| Ukujula Kwembobo | 30–100 μm | 100–400 μm |
| Ukuvikela | Kudingeka isendlalelo esengeziwe sokuvikela | Ingilazi evikela ngokuzenzakalelayo |
| Ukuqhathaniswa kwe-Coefficient Yokukhulisa Ukushisa | Umehluko omkhulu uma uqhathaniswa ne-Cu | Kufana ne-Cu, ukucindezeleka okuphansi kokushisa |
| Izindleko Zenqubo | Phezulu | Kuphansi kakhulu |
| Izicelo | Ukufakwa kwe-Logic/Memory 3D | I-SiP, izinzwa, ukupakishwa kwe-optoelectronic, ama-antenna, i-MEMS |
I-TSV isalokhu iyisinqumo esiyinhloko sokufakwa kwe-logic esebenza kahle kanye ne-memory 3D, kuyilapho i-TGV ikhula ngokushesha ku-SiP, ukuhlanganiswa kwe-optoelectronic, izinzwa, kanye namadivayisi e-RF.
Njengoba ubukhulu be-substrate yengilazi bufinyelela ekupakishweni kwezinga lephaneli (i-PLP), i-TGV isiba yipulatifomu yokuxhumana efanelekile ye-5G, i-radar yezimoto, i-AR optics, kanye nokupakishwa kwe-Mini/Micro LED.
IV. Kusukela ku-Silicon Kuya ku-Glass: Izinzuzo Zezinga Lesistimu
Ukwethulwa kwengilazi akuyona nje into yokufaka esikhundleni sezinto ezibonakalayo; kumele ushintsho kwifilosofi yokuklama ezingeni lesistimu.
Ukusebenza kukagesi: Ingilazi ye-Dk ephansi inciphisa kakhulu ukubambezeleka kwesignali kanye nokusetshenziswa kwamandla.
Ubuqotho besakhiwo: I-TGV inikeza ukuhleleka okuphezulu kanye ne-warpage ephansi yokupakisha endaweni enkulu.
Ukuguquguquka kokukhiqiza: Ukucutshungulwa kwe-laser kuhlanganiswe ne-vacuum PVD kuvumela ukuhambisana okuphezulu kwenqubo kanye nokukhula kwayo.
Ikakhulukazi, ngokuhlanganiswa kwe-optoelectronic, ukukhanya kwengilazi okukhanya kwenza kube lula ukwakheka kokupakisha lapho i-substrate ingasekeli khona ukuxhumana kukagesi kuphela kodwa futhi nama-waveguides, amalensi, namafasitela ezinzwa, okunzima ukukufeza nge-TSV.
Isixazululo Sokumboza Isendlalelo Sembewu ye-V. ZhenHua Vacuum TGV
Izinzuzo Zemishini:
Ukuthuthukisa Ukuhlanganisa Okujulile: Ubuchwepheshe bokufaka okujulile obukwazi ukuphatha ama-vias amancane njengo-30 μm anesilinganiso se-aspect esingu->10:1, okubhekana nezinselele eziyinkimbinkimbi ezijulile.
Ingenziwa ngokwezifiso ngosayizi abahlukahlukene: Isekela izingqimba zengilazi ezifaka phakathi u-600×600 mm, 510×515 mm, noma ngaphezulu.
Ukuguquguquka Kwenqubo: Iyahambisana ne-Cu, Ti, Ni, Pt, kanye namanye amafilimu amancane aqhuba noma asebenzayo ukuze kuhlangatshezwane nezidingo ezahlukene zokumelana kagesi nokugqwala.
Ukusebenza Okuzinzile Nokulungiswa Okulula: Kufakwe ukulawula okuhlakaniphile kokulungiswa kwamapharamitha okuzenzakalelayo kanye nokuqapha ukufana kobukhulu ngesikhathi sangempela; ukwakheka kwe-modular kwenza kube lula ukulungiswa futhi kunciphisa isikhathi sokungasebenzi.
Ububanzi Bokusetshenziswa: Kufanelekela ukupakishwa okuthuthukisiwe kwe-TGV/TSV/TMV, kufinyelela ekujuleni ngesendlalelo sembewu ngesilinganiso se-aspect esingu-10:1.
—Lesi sihloko sishicilelwe nguimishini yokumboza nge-vacuum umenzi we-Zhenhua Vacuum
Isikhathi sokuthunyelwe: Okthoba-16-2025