Kubunjiniyela bomphezulu besimanje, i-Physical Vapor Deposition (PVD) ivele njengobuchwepheshe obuyinhloko bokumboza nge-vacuum ngenxa yokusebenza kwayo okuhle kakhulu kwefilimu kanye nezici ezinobungani nemvelo. Lesi sihloko sinikeza ukuhlaziywa okujulile kwezimiso, ukuhlukaniswa, kanye nokusetshenziswa okuvamile kobuchwepheshe be-PVD, okunikeza ukuqonda kobuchwepheshe kochwepheshe kulo mkhakha.
Izimiso Eziyisisekelo Zobuchwepheshe be-PVD No.1
I-PVD inqubo eyenziwa ngaphansi kwezimo ze-vacuum (ngokuvamile ≤10⁻³ Pa), lapho into yokumboza ifakwa khona umhwamuko ngokomzimba bese ihlanganiswa phezu kwe-substrate ukuze kwakhiwe ifilimu eqinile nencane. Le ndlela ichazwa yilokhu:
Izinga lokushisa eliphansi kakhulu lokufaka (ngokuvamile <500°C)
Ukuhlanzeka okuphezulu kwefilimu kanye nokwakheka okungalawuleka
Inobungani nemvelo (akukho ukukhishwa kwamanzi angcolile)
Ukulawula ukuchaneka kwezinga le-nanometer
Izigaba zeNombolo 2Abasebenzi be-PVDtIzinqubo
1. Isimbozo Sokuhwamuka Komshini Wokuhlanza
Ukuhwamuka kwe-vacuum kuhilela ukushisa izinto zokumboza kuze kube yilapho zifinyelela umfutho wazo womusi ogcwele bese zihwamuka. Izinhlobo ezivamile zifaka:
Ukuhwamuka Kokushisa Okungasasebenzi
Isebenzisa izinsimbi ezimelana nokushisa ezifana ne-tungsten noma i-molybdenum. Ifaneleka ezintweni eziphansi zokuncibilika njenge-aluminium (Al) nesiliva (Ag).
Ukuhwamuka Kwemisebe Ye-Electron (EB-PVD)
Isebenzisa isibhamu se-electron (10–30 kV) ukuhlasela izinto eziqondiwe, ikhiqize amazinga okushisa asendaweni angaphezu kuka-3000°C. Ilungele ama-oxide ancibilika kakhulu.
I-Molecular Beam Epitaxy (MBE)
Indlela enembile kakhulu eyenziwa ngaphansi kwe-vacuum ephezulu kakhulu (≤10⁻⁸ Pa), evumela ukulawulwa kwezinga le-athomu lokukhula kwefilimu ye-epitaxial.
2. Ukukhipha Amanzi
Ukuphalaza kuhilela izinhlayiya ezinamandla aphezulu ezihlasela into eqondiwe, zikhiphe ama-athomu afakwa ku-substrate. Izinhlobo ezibalulekile zokuphalaza zifaka:
I-DC Sputtering (I-Direct Current)
Indlela eyisisekelo yokuphalaza; ithagethi kumele ibe nokulawula ugesi.
Ukuvuza kwe-RF (Imvamisa Yomsakazo)
Isebenza ku-13.56 MHz, ivumela ukuchitheka kwezinto zokuvikela ukushisa.
Ukuphalaza kweMagnetron
Uhlobo Olulinganiselwe: Amandla ensimu yamagnetic angu-100–300 Gauss kulo lonke indawo eqondiwe
Uhlobo Olungalingani: Ukusabalala kwe-plasma okuthuthukisiwe ukuze kube nokufakwa okungcono
I-Mid-Frequency Twin Cathode: Ixazulula inkinga "yobuthi obuqondiwe" ekusakazeni okusebenzayo
I-High Power Impulse Magnetron Sputtering (HAPIMS): Amazinga e-ionization >90%, akhiqiza amafilimu aminyene kakhulu, angewona amakholomu
Inombolo 3 Ukusetshenziswa Okuvamile Kobuchwepheshe be-PVD
Izembozo Zamathuluzi
Izimbozo eziqinile ezifana ne-TiN, i-TiAlN (ubulukhuni >3000 HV)
Isetshenziswa kabanzi ekusikeni amathuluzi nokuthuthukisa ubuso besikhunta
Izembozo Zokuhlobisa
Ukuqeda okufana negolide kusetshenziswa i-ZrN, i-TiZrN
Kusetshenziswa ozimele befoni ephathekayo, izinto zasendlini yokugezela, kanye nezimpahla zabathengi
Amafilimu Amancane Asebenzayo
Amafilimu okuqhuba abonakalayo e-ITO (Indium Tin Oxide) anokumelana neshidi <10 Ω/□
Izimbozo ezivikela ukukhanya ezibonakalayo ezinokukhanya okubonakalayo >99%
Ukupakishwa kwe-semiconductor
Ukwenziwa kwensimbi ezingeni le-wafer (ukuxhumana kwe-Al, Cu)
Ukufakwa kwengqimba yesithintelo kusetshenziswa i-TaN, i-TiN yokumelana nokusabalala
-Lesi sihloko sikhishwe yi-umenzi womshini wokumboza nge-vacuum I-Zhenhua Vacuum.
Isikhathi sokuthunyelwe: Juni-18-2025