Njengoko izixhobo ze-semiconductor ziqhubeka nokwehla ngelixa zidibanisa imisebenzi emininzi, iitekhnoloji zokupakisha zijongene nemingeni engakaze ibonwe ngaphambili. Ukufakwa kwe-vacuum coating kuye kwavela njengenkqubo ephambili yokuvumela ukupakisha kwe-semiconductor okuphucukileyo, ukuqinisekisa ukwenziwa kwezixhobo zibe zincinci, ukusebenza okuphezulu, kunye nokuthembeka kwexesha elide. Ngokusebenzisa iindlela zobunjineli befilimu encinci ezifana nokufakwa komphunga ngokwasemzimbeni (PVD), ukufakwa komphunga wamakhemikhali (CVD), kunye nokufakwa kwe-atomic layer (ALD), abavelisi banokujongana neemfuno ezibalulekileyo zokukhusela izithintelo, ukusebenza kombane, kunye nolawulo lobushushu kwiitships zesizukulwana esilandelayo.
Imingeni eqhelekileyo kwi-Semiconductor Packaging
Ukupakisha i-semiconductorAkusekho nyathelo lilula lokukhusela kodwa linqanaba elibalulekileyo lokusebenza. Imingeni eqhelekileyo ibandakanya:
Ukufuma kunye nokungena kweoksijini
Izixhobo ezifakwe kwiikhaphu zinobuthathaka kakhulu ekuchatshazelweni kwendalo. Nokuba amanqanaba amancinci okufuma okanye ukusasazeka kweoksijini kunokukhokelela ekuboleni, ukufuduka kwesinyithi, okanye ukubola kwe-dielectric.
Ukuthembeka kweLayer yeBarrier
Ii-polymer encapsulants eziqhelekileyo zihlala zingabonakalisi zimpawu zokuthintela ezaneleyo. Ngaphandle kwe-thin-film coating eqinileyo, ii-chips zinokungaphumeleli kokuthembeka kwiimeko ezinomswakama ophezulu okanye zobushushu obuphezulu.
Ukufuduka kwe-Electro kunye nozinzo lwe-Interconnect
Uxinano oluphezulu lwamandla ombane kwii-nodes eziphambili lukhawulezisa ukufuduka kwe-electromigration. Ukunamathela okungekho semgangathweni okanye ukugquma okungafaniyo kunokuphazamisa ubomi bokudibanisa.
Imida yoKusasazeka koBushushu
Njengoko uxinano lwamandla esixhobo lusanda, ukungoneli kolawulo lobushushu kunokukhokelela kwiindawo ezishushu kakhulu, ukwehla kokusebenza, kunye nokunciphisa ubomi besixhobo.
Ubungakanani obuncinci kunye nokugubungela umlinganiselo wombala
Izakhiwo eziphambili zokupakisha ezifana neThrough-Silicon Vias (TSVs) kunye neThrough-Glass Vias (TGVs) zifuna ukugqunywa okucwangcisiweyo ngaphakathi kwimisele kunye nee-vias ezinomlinganiselo ophezulu, ezihlala ziyingxaki enkulu yobugcisa.
Izisombululo Zokugquma Umshini
1. Iingubo zokuthintela ukufuma/ioksijini
Iifilimu ezibhityileyo zeSiO₂, SiNₓ, kunye ne-Al₂O₃ ezifakwe nge-PVD okanye i-ALD zisebenza njengeeleya ze-hermetic encapsulation, zinciphisa kakhulu amazinga okudluliselwa komphunga wamanzi (WVTR).
Ii-multi-layer barrier stacks ezidibanisa ii-inorganic kunye nee-hybrid layers zifezekisa ukuthembeka okuphezulu, nto leyo ebaluleke kakhulu kwiimodyuli ze-RF kunye nokupakishwa kwe-MEMS.
2. Ukukhuthaza ukunamathela kunye neeLayers zoMdibaniso
Iingqimba zokuncamathela zeTi, Cr, okanye TiN zonyusa amandla okubopha phakathi kweengqimba zesinyithi kunye nee-dielectrics, zithintela ukuqhekeka ngexesha lokujikeleza kobushushu.
Unyango lomphezulu weplasma luphucula ngakumbi ukumanzisa kunye nokwakheka kwefilimu kwi-substrates ezinamandla aphantsi.
3. Iileya zokuNciphisa ukuSasazwa kunye nokuHanjiswa kweMithombo ye-Electromigration
Iingqimba zomqobo zeTa, TaN, kunye neRu ezifakwe nge-magnetron sputtering zisebenza njengezithintelo zokusasazwa ezisebenzayo kwii-Cu interconnects.
Ezi layers zinciphisa ukufuduka kwe-electromigration, zigcina ukuhanjiswa kwe-interconnect phantsi koxinzelelo oluphezulu lwamandla.
4. Iingubo zoLawulo loBushushu
Iingubo eziphezulu zokuqhuba ubushushu ezifana ne-diamond-like carbon (DLC) okanye iifilimu ze-AlN zonyusa ukusasazwa kobushushu.
Iingubo ezilungiselelwe zodwa zivumela ukuhlanganiswa kwiimodyuli ze-power semiconductor, izixhobo ze-SiC/GaN, kunye neetships ze-high-performance computing (HPC).
5. Iingubo ezihambelanayo zezakhiwo ze-High Aspect Ratio
I-ALD ibonelela ngolawulo lwenqanaba le-athomu, iqinisekisa iifilimu ezihambelanayo nezingenamingxunya kwii-TSV kunye nee-TGV ezinemilinganiselo yokujonga engaphezulu kwe-10:1.
Oku kubalulekile ekupakishweni kwe-3D IC, apho uxinano lonxibelelwano kunye nokuthembeka kuchaphazela ngokuthe ngqo isivuno.
Izicelo zeTyala
Ukupakisha kwe-MEMS: Ukufakwa kwefilimu encinci kunye nee-Al₂O₃/SiNₓ stacks kuphucula ukuqina kwayo, kwandisa ubomi besixhobo kwiindawo zeemoto kunye nezoshishino.
Iimodyuli ze-RF Front-End: Iingubo zokuthintela ezineengqimba ezininzi zinciphisa amandla e-parasitic kunye nokushukuma kokusebenza okubangelwa kukufuma.
I-Power Electronics: Iingubo ze-DLC thermal spreader zonyusa ukusasazwa kobushushu kwi-SiC-based MOSFETs, nto leyo evumela ukusebenza kakuhle okuphezulu.
Ukuhlanganiswa kwe-3D: Iingubo ze-ALD ezihambelanayo kwi-TSV/TGV ziqinisekisa ukuthembeka ngokusebenzisa i-insulation kunye ne-metallization kwizixhobo zememori ye-bandwidth ephezulu (HBM).
Iingenelo zokufaka iVacuum Coating kwiPakethe
Ukuthembeka Okuphezulu: Isithintelo esiphakamileyo kunye nokusebenza okunamathelayo kuqinisekisa uzinzo lwesixhobo ixesha elide.
Ubungakanani bokukwazi ukulinganisa: Iinkqubo zokufaka izinto ezisebenzisa i-vacuum zixhasa ukupakishwa kwe-wafer-level (WLP) kunye nokupakishwa kwe-panel-level (PLP), okuvumela ukuveliswa kobuninzi okungabizi kakhulu.
Ukuguquguquka kwenkqubo: Iyahambelana nezixhobo ezahlukeneyo (i-Si, i-GaAs, i-SiC, iglasi, ii-polymers), ihlangabezana neemfuno ezahlukeneyo zokudibanisa.
Ukuthobela iNdalo: Kuphelisa iinkqubo ezimanzi ezingcolisa kakhulu ezifana nokufakelwa kwe-electroplating, okuhambelana nemigangatho yokuvelisa eluhlaza.
Isiphelo
Ukugquma nge-vacuum kube sisiseko sokupakisha kwe-semiconductor okuphucukileyo, okujongana nemingeni yokukhusela izithintelo, ulawulo lobushushu, kunye nokugubungela umlinganiselo ophezulu. Njengoko ishishini litshintshela ekudibaneni okungafaniyo, uyilo lwe-chiplet, kunye nokufakwa kwe-3D, imfuno yokubekwa kwefilimu ethe tye ngokuchanekileyo iya kukhula ngakumbi.
Ngokusebenzisa ubuchule obuqhubekayo kwi-PVD, i-ALD, kunye namaqonga okugquma ahlanganisiweyo, izisombululo zokugquma nge-vacuum aziphuculi nje ukuthembeka kodwa zivumela ikamva lokupakishwa kwe-semiconductor.
—Eli nqaku lipapashwe nguizixhobo zokugquma nge-vacuumumenzi we-Zhenhua Vacuum
Ixesha leposi: Sep-27-2025