Kwinguquko yetekhnoloji yokupakisha ye-semiconductor, unxibelelwano oluthe nkqo belusoloko luyinto ephambili emisela ukusebenza kwenkqubo, indawo efunekayo, kunye nokusetyenziswa kwamandla. Ukususela kwiindlela zokuqala zokubopha intambo kunye neendlela zokuyi-flip-chip ukuya ekuveleni kwee-IC ezihlanganisiweyo ze-3D, eli shishini belifuna izisombululo zonxibelelwano oluxineneyo oluphezulu kunye nezisombululo zonxibelelwano olufutshane.
Kule meko, i-TSV (Through Silicon Via) kunye ne-TGV (Through Glass Via) zivele njengeetekhnoloji ezimbini eziphambili zokudibanisa ngokuthe nkqo. Zahlukile kwiinkqubo zezinto, iinkqubo zokuvelisa, iimpawu zokusebenza, kunye neendawo zokusetyenziswa, nto leyo emele inqaku elibalulekileyo kuphuhliso lokupakisha lwesizukulwana esilandelayo.
I. TSV: Uvulindlela we-3D Packaging
1. Umgaqo woBugcisa
I-TSV ibhekisa kwii-vias ezine-aspect-ratio ephezulu ezikrolwe kwi-substrate ye-silicon (ngesiqhelo zifikelela kumashumi ukuya kumakhulu ee-microns ubunzulu), kulandele ukwenziwa komaleko wokukhusela, umaleko wembewu yesinyithi, kunye nokuzaliswa kwesinyithi (ngesiqhelo yi-copper) kwiindonga ze-via. Ezi vias zithe nkqo zivumela ukunxibelelana kombane okukhawulezayo phakathi kwee-stacked chip layers.
2. Ukuhamba kweNkqubo
Inkqubo eqhelekileyo yokwenziwa kwe-TSV ibandakanya:
I-Deep Silicon Etching (DRIE): Yenza ii-vias ezinemilinganiselo ephezulu kwi-silicon wafer.
Ukufakwa kweLayer yokukhusela: Ngokwesiqhelo i-SiO₂ efakwa kwi-PECVD ukuze ikhuphe ngombane isizaliso sesinyithi kwi-substrate ye-silicon.
Ukufakwa kweLayer yeMbewu kunye nokuPlayita ngeElectroplating: Ukufakwa kwePVD yomaleko wembewu yesinyithi kulandele ukufakelwa kweelectroplating ngecopper.
Ukupholisha oomatshini beKhemikhali (i-CMP): Susa isinyithi esigqithisileyo ukuze ufumane umphezulu ocwangcisiweyo.
3. Iingenelo kunye nokunqongophala
I-TSV inikezela ngeendlela zonxibelelwano ezimfutshane kakhulu, ukubambezeleka kwesignali ephantsi, ukusetyenziswa kwamandla okuphantsi, kunye ne-bandwidth ephezulu, okwenza ukuba ibe sisixhobo esibalulekileyo sokulawula ukusebenza okuphezulu kunye nememori ye-bandwidth ephezulu.
Nangona kunjalo, i-TSV ikwanazo nemida:
Iingxaki zoxinzelelo lobushushu: Ukungafani okukhulu kwi-CTE phakathi kwe-silicon kunye nobhedu kunokunciphisa ukuthembeka.
Ixabiso eliphezulu lenkqubo: Ukukrola okunzulu, ukufakelwa kwe-electroplating, kunye ne-CMP ziyinkimbinkimbi kwaye zinovelwano kwimveliso.
Imingeni yokwambathisa umbane: Ubukhulu kunye nokufana komaleko wokwambathisa umbane kuchaphazela ngokuthe ngqo amandla e-dielectric.
Njengoko uxinano lokudibanisa iitships lusanda, iingxabano phakathi kwemveliso kunye neendleko ziye zakhokelela ekuhlolweni kwezixhobo ezizezinye—okudala ithuba le-TGV.
II. TGV: Ubuchule bokuHlanganisa obusekwe kwiGlasi
1. Umgaqo woBugcisa
I-TGV isebenzisa ii-substrates zeglasi endaweni ye-silicon. Ii-vias ezichanekileyo kakhulu zenziwa ngokubhola nge-laser okanye ngokucheba okumanzi, kulandele ukufakwa komaleko wembewu yesinyithi kunye nokufakelwa nge-electroplating, kufezekisa ukudibana okuthe nkqo okufana ne-TSV.
IGlass inika ubushushu obuhle kakhulu bombane, i-dielectric constant ephantsi (Dk), ilahleko ephantsi ye-dielectric (Df), kunye nozinzo olubalaseleyo lobukhulu, okwenza i-TGV ibe nomtsalane kakhulu ekudlulisweni kwesignali ngesantya esiphezulu kunye nokupakishwa kwe-optoelectronic.
2. Ukuhamba kweNkqubo
Amanyathelo aphambili ekwenziweni kwe-TGV aquka:
Ukubhola ngeLaser: Iilaser ezikhawulezayo zenza ii-microvias kwiglasi ezinobubanzi obuqhelekileyo obuphakathi kwe-20–150 μm.
Ukubekwa kweLayer yeMbewu: I-PVD, efana nokutshiza kwemagnetron, ibeka umaleko ofanayo oqhubayo eludongeni oluhamba ngentambo.
Ukufakelwa kwesinyithi: I-Copper okanye i-nickel-copper alloy izalisa ii-vias ukuze zenze uqhagamshelo lombane olusebenzisa iglasi.
Ukucwangcisa kunye nokuPatanisa: Ivumela uqhagamshelo oluneeleya ezininzi okanye ukubophelela kwiitships ze-IC.
3. Iingenelo
Xa kuthelekiswa ne-TSV, i-TGV ibonisa iingenelo ezininzi:
Ukulahleka okuphantsi kwe-dielectric: I-Glass Dk imalunga ne-1/3 ye-silicon, nto leyo enciphisa ukulahleka kwe-crosstalk yesiginali kunye nokulahleka kokufakwa.
Uzinzo oluhle kakhulu lobushushu: I-CTE isondele kwisinyithi, inciphisa uxinzelelo lobushushu.
Ukukhanya okubonakalayo: Ixhasa ukuhlanganiswa kwe-optoelectronic kwi-photonics kunye nee-sensors.
Iindleko ezilawulekayo: Ukubhola nge-laser kunye nokucubungula iglasi kuyavuthwa, kufanelekile kwimveliso enkulu yeepaneli.
III. I-TSV vs TGV: IiDomain zokuthelekisa kunye nezicelo
| Into | I-TSV (NgeSilicon Via) | I-TGV (NgeGlasi Ngendlela) |
| I-substrate | I-silicon enombala ocwebezelayo | Iiglasi ezikhethekileyo (iBorofloat, iCorning, iSchott, njl.njl.) |
| Ububanzi bomngxuma | 5–50 μm | 20–150 μm |
| Ubunzulu beHole | 30–100 μm | 100–400 μm |
| Ukuvala ubushushu | Kufuneka umaleko owongezelelweyo wokukhusela | Iglasi igquma ngokuzimela |
| Ukwanda kobushushu Ukufaniswa komlinganiselo wobushushu | Umahluko omkhulu xa uthelekiswa neCu | Ifana neCu, uxinzelelo oluphantsi lobushushu |
| Iindleko zeNkqubo | Phezulu | Iphantsi kakhulu |
| Izicelo | Ukufakwa kweLogic/Memory 3D | I-SiP, ii-sensors, ukupakishwa kwe-optoelectronic, ii-antenna, ii-MEMS |
I-TSV iselukhetho oluphambili lwe-logic esebenzayo kunye ne-memory 3D stacking, ngelixa i-TGV ikhula ngokukhawuleza kwi-SiP, i-optoelectronic integration, ii-sensors, kunye nezixhobo ze-RF.
Njengoko ubukhulu beglasi bufikelela kwinqanaba lokupakisha (i-PLP), i-TGV iba liqonga elifanelekileyo lokunxibelelana kwe-5G, i-radar yeemoto, i-AR optics, kunye nokupakisha iMini/Micro LED.
IV. Ukusuka kwiSilicon ukuya kwiGlasi: Iingenelo zeNqanaba leNkqubo
Ukwaziswa kweglasi akusiyonto nje yokutshintsha izinto; kumela utshintsho kwifilosofi yoyilo lwenqanaba lenkqubo.
Ukusebenza kombane: Iglasi ye-Dk ephantsi inciphisa kakhulu ukulibaziseka kwesignali kunye nokusetyenziswa kombane.
Ukunyaniseka kwesakhiwo: I-TGV inika ulungelelwaniso oluphezulu kunye ne-warpage esezantsi yokupakisha kwindawo enkulu.
Ukuguquguquka kokwenziwa: Ukucubungula nge-laser kunye ne-vacuum PVD kuvumela ukuhambelana okuphezulu kwenkqubo kunye nokukhula kwayo.
Ngokukodwa, ngokudityaniswa kwe-optoelectronic, ukukhanya kweglasi okubonakalayo kwenza kube lula ukuyila ukupakisha apho i-substrate ixhasa kungekuphela nje uqhagamshelo lombane kodwa kunye nezikhokelo zamaza, iilensi, kunye neefestile zesensor, nto leyo enzima ukuyenza nge-TSV.
Isisombululo sokugquma iMbewu ye-V. ZhenHua Vacuum TGV
Iingenelo zezixhobo:
Ukuphucula ukuCoating ngeDeep Via: Itekhnoloji yokuCoating ngeDeep Via ekwaziyo ukuphatha ii-vias ezincinci njenge-30 μm ezinomlinganiselo we >10:1, ezijongana nemingeni enzima ngedeep via.
Ingalungiselelwa ubungakanani obahlukeneyo: Ixhasa ii-substrates zeglasi eziquka i-600×600 mm, 510×515 mm, okanye ezinkulu.
Ukuguquguquka kwenkqubo: Iyahambelana neCu, Ti, Ni, Pt, kunye nezinye iifilimu ezincinci eziqhubayo okanye ezisebenzayo ukuhlangabezana neemfuno ezahlukeneyo zokumelana nombane kunye nokugqwala.
Ukusebenza Okuzinzileyo Nokulungiswa Okulula: Ixhotyiswe ngolawulo olukrelekrele lokulungisa iiparameter ngokuzenzekelayo kunye nokujonga ubunye bobukhulu ngexesha langempela; uyilo lwemodyuli lwenza kube lula ukugcinwa kwaye lunciphise ixesha lokungasebenzi.
Ububanzi bokusetyenziswa: Ifanelekile kwiipakethe eziphambili ze-TGV/TSV/TMV, ifikelela nzulu ngokusebenzisa ungqimba lwembewu olune-aspect ratio ye-10:1.
—Eli nqaku lipapashwe nguizixhobo zokugquma nge-vacuum umenzi we-Zhenhua Vacuum
Ixesha leposi: Oktobha-16-2025