Iziphumo zeendlela ezahlukeneyo zokukhupha umbane kwi-Microstructure yeengubo

Kwinkqubo yokugquma nge-vacuum, isakhiwo seefilimu ezincinci sidlala indima ebalulekileyo ekumiseleni iimpawu zazo zoomatshini, ukusebenza kwe-optical, kunye nokumelana nokugqwala. Isakhiwo seefilimu ezincinci sichaphazeleka kakhulu zizinto ezifana noxinano lwefilimu, ubungakanani bengqolowa, imeko yoxinzelelo, kunye noburhabaxa bomphezulu. Ezi parameter, nazo, zilawulwa kakhulu yindlela yokukhupha esetyenziswa ngexesha lokufaka. Iindlela zokukhupha ezisetyenziswa kakhulu kwi-thin film deposition yi-Direct Current (DC) discharge, i-Radio Frequency (RF) discharge, i-Medium Frequency (MF) discharge, kunye ne-Pulsed DC discharge. Ngayinye kwezi ndlela zokukhupha impembelelo kwiimpawu ze-plasma kunye nokusasazwa kwamandla, okuchaphazela kakhulu isakhiwo seefilimu ezigciniweyo. Eli nqaku lixoxa ngendlela iindlela ezahlukeneyo zokukhupha ezichaphazela ngayo imo yengqolowa, ukufana kwefilimu, imeko yoxinzelelo, kunye noxinano lwefilimu.

Ukukhupha i-Direct Current (DC) kunye nefuthe layo kwi-Microstructure yeFilimu

Ukukhupha i-DC yenye yezona ndlela zisetyenziswa kakhulu zokutshiza, ingakumbi ekufakweni kweefilimu zesinyithi. Ukukhupha i-DC kusebenza ngokudala intsimi yombane phakathi kwento ekujoliswe kuyo kunye ne-substrate, nto leyo ebangela ukuba ii-elektroni kunye nee-ion zingqubane zize zifake izinto kwi-substrate.

Iimpawu zobugcisa:

Izinga eliphezulu lokutshiza: Ifanelekile ukubekwa ngokukhawuleza kweefilimu zesinyithi.

Uxinano oluphantsi lweplasma: Iziphumo kwiifilimu ezinobukhulu obukhulu beenkozo kunye nesakhiwo esirhabaxa.

Uxinzelelo oluphezulu olushiyekileyo: Uxinzelelo lwangaphakathi kwifilimu lunokuba phezulu, nto leyo enokuchaphazela ukunamathela kunye nokuqina kwefilimu.

Iziphumo kwi-Microstructure:

Ubungakanani beenkozo: Ukukhutshwa kweDC kudla ngokuphumela kwiifilimu ezinobukhulu beenkozo ezinkulu.

Uxinano lwefilimu: Ifilimu idla ngokuba ncinci kancinci, ineembobo kunye neembobo ezinokubakho.

Uxinzelelo lwangaphakathi: Ifilimu idla ngokubonisa uxinzelelo lwangaphakathi oluphezulu, olunokukhokelela kwimiba efana nokwahlulwa okanye ukugoba kwezinye iinkqubo.

Ukukhupha iRadio Frequency (RF) kunye nefuthe layo kwiFilm Microstructure

Ukukhupha i-RF kusebenzisa amasimi ombane atshintshanayo asebenzisa i-frequency ephezulu ukuvelisa i-plasma, kwaye kudla ngokusetyenziswa ekutshizeni izinto zokukhusela ezifana nee-oxides kunye nee-nitrides. Ukukhupha i-RF kuluncedo ekutshizeni okujoliswe kuko okungaqhubiyo kuba kuthintela ukuqokelelana kwetshaja kwindawo ekujoliswe kuyo, kuqinisekisa ukuveliswa kwe-plasma okuzinzileyo.

Iimpawu zobugcisa:

Ubuninzi beplasma: Kukhokelela ekugqumeni okufanayo ngakumbi.

Ifanelekile kwiithagethi ezingahambisi mbane: Ukukhupha i-RF kulungele ukusetyenziswa kwezinto zokukhusela ezifana nee-oxides kunye nee-nitrides.

Izinga lokufaka eliphantsi: Ngenxa yamandla aphantsi okutshiza, ukukhutshwa kwe-RF kudla ngokubangela amazinga okufaka aphantsi.

Iziphumo kwi-Microstructure:

Ubungakanani beenkozo: Ukukhutshwa kwe-RF kuvelisa iifilimu ezinobukhulu obuncinci beenkozo, nto leyo ephucula uxinano lwefilimu kunye nokusebenza kwe-optical.

Uxinzelelo: Ifilimu idla ngokuba noxinzelelo oluphantsi lwangaphakathi, njengoko ukufana kweplasma kunciphisa ukuguquguquka koxinzelelo.

Umgangatho womphezulu: Ifilimu idla ngokuba nomphezulu ogudileyo, nto leyo eyenza ukuba ifaneleke kwiingubo ezibonakalayo, iifilimu ze-dielectric, kunye neefilimu ezincinci ezisebenzayo.

Ukukhupha i-Medium Frequency (MF) kunye nefuthe layo kwi-Microstructure yeFilimu

Ukukhupha i-MF kusebenza kuluhlu lwe-10–200 kHz kwaye kudla ngokusetyenziswa kwiingubo zesinyithi kunye neenkqubo zokutshiza ezisabelayo. Ukukhupha i-MF kuvelisa i-plasma enamandla phantsi kweemeko zamandla aphezulu kwaye iyakwazi ukubonelela ngamanani aphezulu okufaka.

Iimpawu zobugcisa:

Ubuninzi bamandla: Ivumela amazinga okufakwa ngokukhawuleza kunye nemiphumo enamandla yokutshiza.

Ukulahleka okuphantsi kwe-ionization: Xa kuthelekiswa nokukhutshwa kwe-RF, ukukhutshwa kwe-MF kubangela ukulahleka okuncinci kwe-ionization, nto leyo ephucula ukusebenza kakuhle kwe-deposition.

Izinga eliphezulu lokufaka: Ukukhupha i-MF kufanelekile kwiingubo ezinkulu kwimveliso yemizi-mveliso.

Iziphumo kwi-Microstructure:

Ubungakanani beenkozo: Ifilimu idla ngokuba neenkozo ezincinci kunye noxinano olungcono.

Ukufana: Iifilimu ezifakwe kwi-MF discharge zihlala zinesakhiwo esifana ngakumbi.

Uxinzelelo: Ngenxa yobuninzi bamandla, iifilimu zokukhupha i-MF zibonisa uxinzelelo oluphantsi lwangaphakathi, nto leyo enegalelo kumgangatho ongcono womphezulu kunye nokusebenza kakuhle kokubeka i-deposition.

Ukukhupha i-DC okutyhafileyo kunye nefuthe layo kwisakhiwo sefilimu

Ukukhupha i-DC eshukumayo yindlela ebandakanya ulawulo lombane oshukumayo, oluhlala lusetyenziswa kwizicelo ze-ion ezisebenzisa amandla aphezulu. Le ndlela yokukhupha iluncedo ngokukodwa ekufezekiseni uxinano oluphezulu lwee-ion kunye nemiphumo emihle yokutshiza, ngelixa ikwabonelela ngesantya esiphezulu sokufaka.

Iimpawu zobugcisa:

Amandla okutyhala: Amandla aphezulu ngexesha lokutyhala avumela amazinga aphezulu okufumba.

Ukuphuculwa kokunciphisa i-arc: Ukukhupha i-DC eshukumayo kunceda ekunciphiseni iziphumo ze-arcing, nto leyo eluncedo kakhulu ekutshizeni ngamandla amakhulu.

Ukusebenza kakuhle kokutshiza: Ukukhupha i-DC eshukumayo kusebenzisa amandla amaninzi, kunika amazinga aphezulu okutshiza kunye nokusetyenziswa kwamandla okuphantsi.

Iziphumo kwi-Microstructure:

Ubungakanani beenkozo: Iifilimu eziveliswa yi-pulsed DC discharge zihlala zinobukhulu obuphakathi beenkozo, zilinganisa uxinano lwefilimu kunye nokufana.

Ukunamathela kwifilimu: Iifilimu zihlala zibonisa ukunamathela okunamandla kwi-substrate, ngenxa yokuqhuma kwee-ion ezinamandla aphezulu.

Ukumelana nokuguguleka: Iifilimu ze-DC ezishukumayo zihlala zibonisa ukumelana nokuguguleka okuphezulu ngenxa yokuqhuma kwee-ion ezininzi ngexesha lokufakwa.

Ukuthelekiswa kweeMode zokukhupha kwiFilm Microstructure