Isishwankathelo seNkqubo yokuGcoba iVacuum eqhelekileyo

Kwinjineli yomphezulu yanamhlanje, iPhysical Vapor Deposition (PVD) iye yavela njengeteknoloji ephambili yokugquma i-vacuum ngenxa yokusebenza kwayo kakuhle kwefilimu kunye neempawu zayo ezinobuhlobo nokusingqongileyo. Eli nqaku libonelela ngohlalutyo olunzulu lwemigaqo, ukuhlelwa, kunye nokusetyenziswa okuqhelekileyo kwetekhnoloji yePVD, linika ulwazi lobuchwephesha kwiingcali kweli candelo.

Imigaqo-siseko yeTekhnoloji yePVD yeNombolo 1
I-PVD yinkqubo eyenziwa phantsi kweemeko zomoya (ngesiqhelo ≤10⁻³ Pa), apho izinto zokugquma ziphekwa ngomphunga ngokwasemzimbeni zize zixinaniswe kumphezulu wesiseko ukuze kwenziwe ifilimu eqinileyo neqinileyo. Le ndlela ichazwa ngoku:

Ubushushu bokufaka obuphantsi kakhulu (ngokubanzi <500°C)

Ubumsulwa befilimu ephezulu kunye nokwakheka okulawulekayo

Ilungele okusingqongileyo (akukho nkunkuma yamanzi amdaka)

Ulawulo lokuchaneka kwinqanaba le-nanometer

Uhlu lweNombolo 2Izixhobo zePVDtIinkqubo
1. Ukwaleka koMphunga weVacuum
Ukufuma kwe-vacuum kubandakanya ukufudumeza izinto zokugquma ide ifikelele kuxinzelelo lwayo lomphunga olugcweleyo kwaye luphele. Iindidi eziqhelekileyo ziquka:

Ukufuma Kobushushu Okuthintelayo
Isebenzisa iintsimbi ezirhabaxa ezifana ne-tungsten okanye i-molybdenum njengezinto zokufudumeza. Ifanelekile kwizinto ezincibilika kancinci ezifana ne-aluminium (Al) kunye nesilivere (Ag).

Ukufuma kwe-Electron Beam (EB-PVD)
Isebenzisa umpu we-electron (10–30 kV) ukuhlasela izinto ekujoliswe kuzo, ivelise amaqondo obushushu akwindawo ethile ngaphezulu kwama-3000°C. Ilungele ii-oxides ezinamaqondo aphezulu okunyibilika.

I-Molecular Beam Epitaxy (MBE)
Indlela echanekileyo kakhulu eyenziwa phantsi kwe-vacuum ephezulu kakhulu (≤10⁻⁸ Pa), evumela ulawulo lwenqanaba le-athomu lokukhula kwefilimu ye-epitaxial.

2. Ukukhupha inkunkuma
Ukutshiza kubandakanya amasuntswana anamandla aphezulu ahlasela into ekujoliswe kuyo, akhuphe iiathom ezihlala kwi-substrate. Iintlobo eziphambili zokutshiza ziquka:

I-DC Sputtering (Ngoku ngqo)
Indlela esisiseko yokutshiza; ithagethi kufuneka isebenzise umbane.

Ukutshiza kweRF (Ubuninzi beRadio)
Isebenza kwi-13.56 MHz, ivumela ukutshiza kwezinto zokukhusela ubushushu.

Ukutshiza ngeMagnetron

Uhlobo oluLungelelanisiweyo: Amandla e-magnetic field angama-100–300 Gauss kumphezulu ojoliswe kuwo

Uhlobo olungalinganiyo: Ukusasazwa kweplasma okuphuculweyo ukuze kubekho ukubekwa okungcono

I-Mid-Frequency Twin Cathode: Isombulula ingxaki "yokutyhefa okujoliswe kuko" kwi-reactive sputtering

I-High Power Impulse Magnetron Sputtering (HAPIMS): Amazinga e-Ionization >90%, avelisa iifilimu ezixineneyo kakhulu, ezingezizo iikholamu

Inombolo 3 Usetyenziso Oluqhelekileyo LweTekhnoloji yePVD
Izixhobo zokugquma
Iingubo eziqinileyo ezifana neTiN, TiAlN (ubulukhuni obungaphezulu kwe-3000 HV)

Isetyenziswa kakhulu ekusikeni izixhobo kunye nokuphucula umphezulu womngundo

Iingubo zokuhombisa
Ukugqitywa okufana negolide kusetyenziswa i-ZrN, i-TiZrN

Ifakwe kwiifreyimu zefowuni eziphathwayo, izixhobo zangasese, kunye neempahla zabathengi

Iifilimu Ezincinci Ezisebenzayo
Iifilimu ze-ITO (Indium Tin Oxide) ezibonisa ukukhanya kunye nokumelana neshidi <10 Ω/□

Iingubo zokwaleka ezichasene nokukhanya ezibonakalayo ezinokuhanjiswa kokukhanya okubonakalayo >99%

Ukupakishwa kweSemiconductor
Ukwenziwa kwesinyithi kwinqanaba le-wafer (ii-Al, ii-Cu interconnects)

Ukubekwa komaleko wesithintelo kusetyenziswa iTaN, iTiN yokumelana nokusasazeka

-Eli nqaku likhutshwe nguumenzi womatshini wokugquma nge-vacuum I-Vacuum yaseZhenhua.