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What types of the sputtering coating technology are there?

What types of the sputtering coating technology are there?

2020-07-24

What types of the sputtering coating technology are there?

 

Sputtering coating is abbreviated as "sputtering". As early as 1853, Faraday's gas discharge test was the source of the development of sputtering coating technology widely used today. At that time, this phenomenon of metal deposition on the wall of the discharge tube was called "sputtering phenomenon". Since then, it has been a long time for the development of sputtering coating. Nowadays, compared with other types of coatings, sputtering has superior applicability and it can sputter deposit any thin films of plate-able materials on any substrate to be plated.


vacuum coating machine

 

1Magnetron sputtering (high speed and low temperature sputtering)magnetron sputtering coating machine/multi arc magnetron sputtering coating machine

 

The sputtering power supply is 0.2kV-1kV (high speed with low temperature), 3W/cm²-30W/cm², and the argon pressure is 10⁻²~10⁻¹Pa. Applying a magnetic field in a direction parallel to the target surface, using the principle of a magnetron in which the electric field and the magnetic field are perpendicular to each other, reduces the bombardment of electrons on the substrate (decreases the substrate temperature). It is a high-speed sputtering coating process.

 

2Two-pole sputtering

 

Use DC sputtering source (1kV-7kV, 0.15mA/cm²-1.5mA/cm²) or radio frequency sputtering source (0.3kW-10kW, 1W/cm²-10W/cm²) as sputtering power source. The pressure of argon is about 1.3Pa. It has a simple structure and can sputter a uniform film even when the substrate area is large. The discharge current changes with the change of voltage and environmental pressure.

 

3Three-pole, four-pole sputtering

 

Use DC sputtering source (0~2kV) or radio frequency sputtering source (0~1kW) as sputtering power source. The pressure of argon is 6*10⁻²~1*10⁻¹Pa. It can realize low-voltage and low-pressure sputtering coating. The ion energy and discharge current of bombarding the target can be independently controlled and adjusted. The current of the target can be automatically controlled, or radio frequency sputtering can be used.

 

4、Ion beam sputtering

 

A DC sputtering source is used as a sputtering power source. The pressure of argon is 10⁻³Pa. Using ion beam sputtering to coat the film in a high vacuum environment, the film forming process is completed in a non-plasma state.

 

5Asymmetric AC sputtering

 

Use AC sputtering source (1kV~5kV, 0.1mA/cm²~2mA/cm²) as the sputtering power source. The pressure of argon is 1.3Pa. The sputtering of the target is carried out in a half period with a large amplitude, and the ion bombardment of the substrate is carried out in a half period with a small amplitude, and the adsorbed gas is removed, so that the purity of the obtained coating film layer is higher.

 

6Bias sputtering

 

Apply a potential in the range of 0~500V on the substrate. The pressure of argon is 1.3Pa. In the coating process, the smaller mass of charged particles on the substrate is removed, so that the content of impurity gases (such as residual N₂, H₂O and other gases) in the substrate is effectively reduced.

 

7RF sputtering

 

Use radio frequency sputtering source (0.3kW~10kW, 0-2kv) as sputtering power source. The pressure of argon is 1.3Pa. Radio frequency sputtering is also called RF sputtering. This sputtering coating process was originally developed for the preparation of insulators, such as Al₂O₃, quartz, glass and other materials, and it is now also used in metal film sputtering.

 

8inspiration sputtering

 

Use DC sputtering source (1kV~7kV, 0.15mA/cm²~1.5mA/cm²) or radio frequency sputtering source (0.3kW~10kW, 1W/cm²~10W/cm²) as sputtering power source. The pressure of argon is 1.3Pa.

 

The purity of the film is higher by means of aspirating the active sputtering particles to remove the impurity gas.

 

9Opposite target sputtering

 

Use DC sputtering source or radio frequency sputtering source as sputtering power source. The pressure of argon is 10⁻²~10⁻¹Pa. As you know, two targets are placed in opposite direction, and the direction of adding a magnetic field is perpendicular to the target surface, which can realize low-temperature high-speed sputtering of magnetic materials.

 

10、Reactive sputtering

 

Mix an appropriate amount of active gas in argon, such as oxygen, nitrogen, etc., to prepare Al₂O₃, TiN. The characteristic of reactive sputtering coating is to make compound film of cathode material. For example, using titanium as target, it can make TiC, TiN and other films. In fact, the various sputtering techniques mentioned above can be used for reactive sputtering, However, usually 2 and 8 are not used for reactive sputtering.

 

Sputtering is a thin film manufacturing process. Sputtering coating technology is widely used in many industries, including optical films, surface decoration films, surface protection films, semiconductor processing films, and insulating film layers. The sputtering coating process has excellent film uniformity, film density, and film adhesion, making it an ideal choice for many coating equipment processes.


magnetron sputtering coating machine/multi arc magnetron sputtering coating machine

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