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Vacuum relay device of vacuum coating machine

Vacuum relay device of vacuum coating machine


Vacuum relay device of vacuum coating machine

PVD vacuum coating machine

The device is an automatically switchable switch, which is turned on or off according to the gas pressure at the vacuum measuring point in the vacuum device. From the perspective of its principle, in addition to the compression vacuum gauge, other vacuum gauges, vacuum gauges, etc. can be configured with appropriate control circuits to form a vacuum relay. Among them, the micro-computerized vacuum gauge is particularly special, and the pressure control point can be set more conveniently through software. Any pressure control point can be set within the pressure control range of the vacuum relay. If the pressure measurement value is equal to the pressure setting value, the corresponding control signal is sent to open or close the non-contact or contact switch inside, so that the automatic pressure control can be realized.

In order to reduce the number of targets used in the sputtering system, one target can be used as far as possible to sputter and deposit alloy films that meet the requirements of composition and performance. Alloy targets, composite mosaic targets, and multi-target sputtering can be used.


Generally speaking, in the stable state of discharge, according to the composition of the target, various constituent atoms are respectively subjected to sputtering. One advantage of sputtering coating over vacuum evaporation and ion plating is: the composition of the film and the target The composition difference is small, and the coating composition is stable. However, in some cases, due to the selective sputtering phenomenon of different constituent elements, the reverse sputtering rate of the film and the difference in adhesion, the composition of the film and the target may be quite different. Using this alloy target, in order to prepare a film with a certain composition, in addition to preparing a target with a specific ratio according to the experiment and reducing the temperature of the target as much as possible, it is also necessary to reduce the temperature of the substrate as much as possible to reduce the difference in adhesion rate, and select Proper process conditions minimize the effect of reverse sputtering on the film.


   In some cases, it is not easy to prepare large-area uniform alloy targets and compound targets. In this case, a composite mosaic target composed of a single element can be used. The target surface composition is shown in Figure 1. Among them, the fan-shaped mosaic structure shown in Figure d has the best effect, easy to control the composition of the film, and good repeatability. In principle, not only binary alloys, but also ternary and quaternary alloy films can be prepared by this method.

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