The shortcomings of the resistance evaporation source evaporation method of the evaporation coationg machine
The disadvantages of evaporation coationg machine resistance evaporation source evaporation method are: the maximum temperature that can be reached by heating is limited, and the life of the heater is also short. In recent years, in order to improve the service life of the resistance evaporation source, domestic and foreign vacuum coating equipment factories have adopted the long-lived conductive ceramic material synthesized by boron nitride as the evaporation source. According to a Japanese patent report, it can use a material composed of 20%-30% boron nitride and a refractory material that can melt with it to make an evaporation source (crucible), and coat it with a layer Containing 62%-82% zirconium, the rest is zirconium-silicon alloy material.
9. Radio frequency discharge ion plating (rfip) is performed using resistance heating or electron beam heating, vacuum or charging and other inert gases, under a vacuum pressure of 10-10pa (13.56mhz). Ionization and ion acceleration can work independently at acceleration voltages ranging from 0 to several thousand volts. It has the characteristics of less impurity gas, good film forming quality, and good composite film forming performance, but it is difficult to match. Commonly used in optics, semiconductor devices, accessories, auto parts, etc.
10. Hollow cathode discharge ion plating (HCD) is heated by plasma electron beam and filled with inert gas and active gas. Under the condition of vacuum pressure of 10~10pa, using low-voltage, high-current electron beam collision, it can ionize and work independently under the action of ion accelerator and ion accelerator. It is characterized by high ionization efficiency and large electron beam spot. Metal film, dielectric film and composite film can be plated. Commonly used in wear-resistant coatings, decorative coatings and mechanical products.
11. Active reactive evaporation (are) is a secondary electron beam without accelerating voltage. Under the condition of vacuum pressure of 10-10Pa, it is heated by electron beam and filled with active gases such as o, N, CH, CH, etc. The low-pressure plasma glow discharge between the electron beam and the positively biased probe is a secondary electron without accelerating voltage. An acceleration voltage of zero to several kilovolts can also be applied to the substrate. It is characterized by high evaporation efficiency and can obtain tic, tin, alo and other composite films, which are widely used in electronic devices, mechanical products and decorations.
12. Enhanced are type, heated by electron beam and filled with other inert gases. Reactive gases such as O, N, CH, CH, etc. can be used under a vacuum pressure of 10 to 10 Pa. The low-energy electrons emitted by the enhancer not only attract the primary and secondary electrons of the electron beam, but also promote ionization. It has no acceleration voltage, and there is an acceleration voltage of 0 to several kilovolts on the substrate RE. It has the characteristics of easy ionization, independent adjustment of substrate power and discharge power, and easy control of film thickness. It is widely used in electronic devices, mechanical products, decorations and optical devices.
Hello, please leave your name and email here before chat online so that we won't miss your message and contact you smoothly.