Boenjiniere ba sejoale-joale ba bokaholimo, Physical Vapor Deposition (PVD) e hlahile e le theknoloji ea mantlha ea ho koahela ka vacuum ka lebaka la ts'ebetso ea eona e ntle ea filimi le litšobotsi tse sireletsang tikoloho. Sengoloa sena se fana ka tlhahlobo e tebileng ea melao-motheo, lihlopha le lits'ebetso tse tloaelehileng tsa theknoloji ea PVD, e fanang ka temohisiso ea tekheniki bakeng sa litsebi lefapheng lena.
Melao-motheo ea Motheo ea Nomoro ea 1 ea Theknoloji ea PVD
PVD ke ts'ebetso e etsoang tlas'a maemo a vacuum (hangata ≤10⁻³ Pa), moo thepa ea ho koahela e fetoloang mouoane ka 'mele ebe e kopanngoa holim'a substrate ho etsa filimi e tšesaane e tiileng. Mokhoa ona o khetholloa ka:
Mocheso o tlase haholo oa ho boloka (ka kakaretso <500°C)
Bohloeki bo phahameng ba filimi le sebopeho se ka laolehang
E sireletsa tikoloho (ha ho na metsi a litšila a qhalwang)
Taolo ea ho nepahala ha boemo ba nanometer
Lihlopha tsa nomoro ea 2 tsaLisebelisoa tsa PVDtMekhoa
1. Seaparo sa ho Heletsa Mouoane ka Vacuum
Mouoane oa vacuum o kenyelletsa ho futhumatsa thepa ea ho roala ho fihlela e fihla khatellong ea eona ea mouoane o teteaneng 'me e fetoha mouoane. Mefuta e tloaelehileng e kenyelletsa:
Mouoane oa ho Futhumatsa o Resistive
E sebelisa litšepe tse hanyetsang tse kang tungsten kapa molybdenum e le lintho tse futhumatsang. E loketse lisebelisoa tse nang le ntlha e tlaase ea ho qhibiliha tse kang aluminium (Al) le silevera (Ag).
Mouoane oa Mahlaseli a Elektrone (EB-PVD)
E sebelisa sethunya sa elektrone (10–30 kV) ho hlasela thepa e reretsoeng, e hlahisang mocheso o fetang 3000°C. E loketse li-oxide tse nang le ntlha e phahameng ea ho qhibiliha.
Epitaxy ea Molecular Beam (MBE)
Mokhoa o nepahetseng haholo o etsoang tlas'a vacuum e phahameng haholo (≤10⁻⁸ Pa), o lumellang taolo ea boemo ba athomo bakeng sa kholo ea filimi ea epitaxial.
2. Ho lahla ka ho ntsha metsi
Ho qhala ho kenyelletsa dikarolwana tse nang le matla a mangata tse hlaselang thepa e reriloeng, tse ntshang diathomo tse dulang hodima substrate. Mefuta ya bohlokwa ya ho qhala e kenyeletsa:
DC Sputtering (Motlakase o Otlolohileng)
Mokhoa oa motheo oa ho phunya; sepheo se lokela ho ba se tsamaisang motlakase.
Ho phatloha ha RF (Maqhubu a Radio)
E sebetsa ka lebelo la 13.56 MHz, e lumellang ho phatloha ha thepa e sireletsang mocheso.
Ho phunya ha Magnetron
Mofuta o Leka-lekaneng: Matla a matla a makenete a 100–300 Gauss ho pholletsa le sebaka se reriloeng
Mofuta o sa Leka-lekaneng: Ho hasana ha plasma ho ntlafalitsoeng bakeng sa ho beoa ha plasma hantle
Mid-Frequency Twin Cathode: E rarolla bothata ba "chefo e reretsoeng" ho sputtering e arabelang
Ho phatloha ha Magnetron ka Matla a Phahameng (HAPIMS): Sekhahla sa Ionization >90%, se hlahisa lifilimi tse teteaneng haholo, tse seng tsa kholomo
Nomoro ea 3 Litšebeliso tse Tloaelehileng tsa Theknoloji ea PVD
Liaparo tsa Lisebelisoa
Liaparo tse thata tse kang TiN, TiAlN (bothata >3000 HV)
E sebelisoa haholo bakeng sa lisebelisoa tsa ho seha le ntlafatso ea bokaholimo ba hlobo
Liaparo tse khabisitsoeng
Liqeto tse kang khauta li sebelisoa ho sebelisa ZrN, TiZrN
E sebelisoa ho liforeimi tsa lifono tsa selefouno, lisebelisoa tsa kamore ea ho hlapela le thepa ea bareki
Lifilimi tse Nyenyane tse Sebetsang
Lifilimi tse tsamaisang motlakase tse bonaletsang tsa ITO (Indium Tin Oxide) tse nang le khanyetso ea lakane <10 Ω/□
Liaparo tse thibelang ho bonahatsa tse nang le phetisetso ea khanya e bonahalang >99%
Sephutheloana sa Semiconductor
Tšepe ea boemo ba wafer (likhokahano tsa Al, Cu)
Ho beoa ha lera la litšitiso ho sebelisoa TaN, TiN bakeng sa ho hanyetsa ho hasana
-Sengoloa sena se lokollotsoe kemoetsi oa mochini oa ho roala ka vacuum cleaner Mochini o hloekisang oa Zhenhua.
Nako ea poso: Phuptjane-18-2025