ʻO ka maʻamau o nā kaʻina hana uhi Vacuum Overview

I ka ʻenekinia ʻili hou, ua kū mai ka Physical Vapor Deposition (PVD) ma ke ʻano he ʻenehana uhi vacuum koʻikoʻi ma muli o kāna hana kiʻiʻoniʻoni maikaʻi loa a me nā ʻano aloha kaiapuni. Hāʻawi kēia ʻatikala i kahi loiloi hohonu o nā kumumanaʻo, nā hoʻokaʻawale ʻana, a me nā noi maʻamau o ka ʻenehana PVD, e hāʻawi ana i nā ʻike loea no nā poʻe loea ma ke kahua.

Nā Kumumanaʻo Kumu No.1 o ka ʻenehana PVD
He hana ka PVD i hana ʻia ma lalo o nā kūlana vacuum (maʻamau ≤10⁻³ Pa), kahi e hoʻoheheʻe kino ʻia ai kahi mea uhi a laila hoʻopili ʻia ma luna o ka ʻili substrate e hana i kahi ʻili lahilahi paʻa. Hōʻike ʻia kēia ʻano hana e:

Haʻahaʻa ka mahana waiho ʻana (ma ke ʻano ma lalo o 500°C)

ʻO ka maʻemaʻe kiʻiʻoniʻoni kiʻekiʻe a me ka haku mele hiki ke hoʻomalu ʻia

Aloha i ke kaiapuni (ʻaʻohe hoʻokuʻu ʻana i ka wai ʻino)

Ka mana pololei o ka pae nanometer

Nā Hoʻokaʻawale ʻana o No.2Nā Lako PVDtNā Kaʻina Hana
1. Uhi Hoʻoheheʻe Vacuum
ʻO ka hoʻoheheʻe ʻana o ka vacuum e pili ana i ka hoʻomehana ʻana i ka mea uhi a hiki i kona paʻa ʻana i ka mahu a hoʻoheheʻe ʻia. ʻO nā ʻano maʻamau:

Ka mahu ʻana o ka hoʻomehana kū'ē
Hoʻohana i nā metala kūpaʻa e like me ka tungsten a i ʻole molybdenum ma ke ʻano he mau mea hoʻomehana. Kūpono no nā mea hoʻoheheʻe haʻahaʻa e like me ka alumini (Al) a me ke kālā (Ag).

Ka Hoʻoheheʻe ʻana o ke Kukui Uila (EB-PVD)
Hoʻohana i kahi pū uila (10–30 kV) e hoʻopōkā i ka mea i manaʻo ʻia, e hoʻopuka ana i nā mahana kūloko ma luna o 3000°C. Kūpono no nā oxides melting-point kiʻekiʻe.

ʻO ka Epitaxy Beam Molecular (MBE)
He ʻano hana pololei loa i hana ʻia ma lalo o ka vacuum kiʻekiʻe loa (≤10⁻⁸ Pa), e ʻae ana i ka kaohi pae atomika no ka ulu ʻana o ka ʻili epitaxial.

2. Hoʻokahe ʻana o ka Sputtering
ʻO ka sputtering e pili ana i nā ʻāpana ikehu kiʻekiʻe e hoʻokuʻi ana i kahi mea i manaʻo ʻia, e hoʻolei ana i nā ʻātoma e waiho ana ma luna o ka substrate. ʻO nā ʻano sputtering koʻikoʻi:

Ka hoʻoheheʻe ʻana o DC (Aupuni Pololei)
ʻAno hana sputtering maʻamau; pono ke alakaʻi uila ʻia ka pahuhopu.

Ka hoʻoheheʻe ʻana o RF (alapine lekiō)
Hana ma 13.56 MHz, e ʻae ana i ka sputtering o nā mea insulating.

Ka hoʻoheheʻe ʻana o Magnetron

ʻAno Kaulike: Ka ikaika o ke kahua makeneka o 100–300 Gauss ma ka ʻili o ka pahuhopu

ʻAno Kaulike ʻole: Hoʻonui ʻia ka hoʻolaha plasma no ka waiho ʻana maikaʻi

ʻO ka Mid-Frequency Twin Cathode: Hoʻoponopono i ka pilikia "target poisoning" i ka reactive sputtering

ʻO ka High Power Impulse Magnetron Sputtering (HIPIMS): Nā helu Ionization >90%, e hana ana i nā kiʻiʻoniʻoni ultra-dense, non-columnar

No.3 Nā Hoʻohana Maʻamau o ka ʻenehana PVD
Nā Uhi Hana
Nā uhi paʻakikī e like me TiN, TiAlN (paʻakikī >3000 HV)

Hoʻohana nui ʻia no ka ʻoki ʻana i nā mea hana a me ka hoʻonui ʻana i ka ʻili

Nā Uhi Hoʻonaninani
Nā hoʻopau e like me ke gula me ka hoʻohana ʻana iā ZrN, TiZrN

Hoʻopili ʻia i nā mōlina kelepona paʻalima, nā lako lumi ʻauʻau, a me nā waiwai kūʻai

Nā Kiʻiʻoniʻoni Lahilahi Hana
ʻO nā kiʻiʻoniʻoni alakaʻi moakāka ITO (Indium Tin Oxide) me ke kūpaʻa pepa <10 Ω/□

Nā uhi anti-reflective optical me ka hoʻoili kukui ʻike ʻia >99%

Ka Hoʻopili ʻana o ka Semiconductor
ʻO ka metallization pae Wafer (Al, Cu interconnects)

ʻO ka waiho ʻana o ka papa pale me ka hoʻohana ʻana iā TaN, TiN no ke kū'ē ʻana i ka hoʻolaha ʻana

-Ua hoʻokuʻu ʻia kēia ʻatikala emea hana mīkini uhi hakahaka ʻO Zhenhua Vacuum.